Surface acoustic wave pressure sensor with microstructure sensing elements

• US 6,907,787 B2
• Filed: 04/30/2003
• Issued: 06/21/2005
• Est. Priority Date: 04/30/2003
• Status: Active Grant

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Marsh, Brian J., Cook, James D., Speldrich, Brian D.
• Primary Examiner(s): Lefkowitz, Edward
• Assistant Examiner(s): ALLEN, ANDRE J
• Application Number:
  US10/427,104
• Publication Number:
  US 20040216526A1
• Time in Patent Office: 783 Days
• Field of Search: 737/00, 737/02
• US Class Current: 73/700
• CPC Class Codes: G01L 19/0092 Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26
• CPC Class Codes: G01L 9/0025 with acoustic surface waves

Abstract

A pressure and temperature sensor system, the system comprising one or more microstructure temperature-sensing elements formed on a substrate within a hermetically sealed area thereof, wherein such microstructure temperature-sensing elements comprise SAW temperature-sensing elements. Additionally, one or more microstructure pressure-sensing elements can be located above a sensor diaphragm on the substrate, such that the microstructure pressure-sensing element is formed from a SAW pressure-sensing element. One or more contacts can also be provided, which assist in maintaining the hermetically sealed area and which protrude through the substrate for support and electrical interconnection of the pressure and temperature sensor system.

Claims

1. A pressure sensor system, said system comprising:

at least one microstructure temperature-sensing element formed on a substrate, within a hermetically sealed area thereof;

at least one microstructure pressure-sensing element located above a sensor diaphragm on said substrate; and

at least two contacts which protrude through said substrate for support of said pressure sensor system, wherein said at least two contacts assist in maintaining said hermetically sealed area of said pressure sensor system.

2. The system of claim 1 wherein said at least two contacts comprise through-the-wafer (TTW) contacts.

3. The system of claim 1 wherein said at least one microstructure temperature-sensing element comprises at least one SAW temperature-sensing element and wherein said at least two contacts are surrounded by said hermetically sealed area.

4. The system of claim 1 wherein said at least one microstructure pressure-sensing element comprises at least one saw pressure-sensing element and wherein said at least two contacts are surrounded by said hermetically sealed area.

5. The system of claim 1 wherein said at least one microstructure temperature-sensing element and at least one microstructure pressure-sensing element comprise surface micromachined sensing elements.

6. The system of claim 1 wherein said at least one microstructure temperature-sensing element and at least one microstructure pressure-sensing element comprise bulk micromachined sensing elements.

7. The system of claim 5 wherein said surface micromachined sensing elements are formed from a crystalline material.

8. The system of claim 5 wherein said surface micromachined sensing elements are formed from quartz.

9. The system of claim 6 wherein said surface micromachined sensing elements are formed from silicon.

10. The system of claim 6 wherein said bulk micromachined sensing elements are formed from a crystalline material.

11. The system of claim 6 wherein said bulk micromachined sensing elements are formed from quartz.

12. The system of claim 6 wherein said bulk micromachined sensing elements are formed from silicon.

13. A pressure sensor system, said system comprising:

a non-hermetically sealed sensor chip comprising a substrate;

two microstructure temperature-sensing elements formed on said substrate, wherein said two microstructure temperature-sensing elements comprise SAW temperature-sensing elements composed of a interdigital transducer (IDT) having a plurality of parallel fingers alternately connected to opposite electrodes to which at least one signal can be applied;

one microstructure pressure-sensing element located above a sensor diaphragm within a diaphragm area on said substrate, wherein said microstructure pressure-sensing element comprises a SAW pressure-sensing element composed of an interdigital transducer (IDT) having a plurality of parallel fingers alternately connected to opposite electrodes to which at least one signal can be applied; and

two electrical connection pads located opposite one another upon said substrate and away from said diaphragm area, wherein said two electrical connection pads, said two microstructure temperature-sensing elements, said one microstructure pressure-sensing element and said two electrical connection pads are disposed within said non-hermetically sealed sensor chip.

14. A pressure sensor method, said method comprising:

forming at least one microstructure temperature-sensing element on a substrate within a hermetically sealed area thereof;

locating at least one microstructure pressure-sensing element above a sensor diaphragm on said substrate; and

providing at least two contacts, which protrude through said substrate for support of said pressure sensor system wherein said at least two contacts assist in maintaining said hermetically sealed area of said pressure sensor system.

15. The method of claim 14 further comprising the step of configuring said at least two contacts as through-the-wafer (TTW) contacts.

16. The method of claim 14 further comprising the step of:

forming said at least one microstructure temperature-sensing element to comprise at least one SAW temperature-sensing element; and

surrounding said at least two contacts by said hermetically sealed area.

17. The method of claim 14 further comprising the step of:

forming said at least one microstructure pressure-sensing element to comprise at least one SAW pressure-sensing element; and

surrounding said at least two contacts by said hermetically sealed area.

18. The method of claim 14 further comprising the step of:

forming said at least one microstructure temperature-sensing element and at least one microstructure pressure-sensing element to comprise surface micromachined sensing elements.

19. The method of claim 18 further comprising the step of:

forming said surface micromachined sensing elements from a crystalline material, wherein said at least two contacts comprise through-the-wafer (TTW) contacts.

20. The method of claim 18 further comprising the step of:

forming said surface micromachined sensing elements from quartz, wherein said at least two contacts comprise through-the-wafer (TTW) contacts.