Mass storage array and methods for operation thereof

• US 6,975,536 B2
• Filed: 08/05/2002
• Issued: 12/13/2005
• Est. Priority Date: 01/31/2002
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies Company Limited (Infineon Technologies AG), Saifun Semiconductors Ltd. (Infineon Technologies AG)
• Inventors: Maayan, Eduardo, Cohen, Zeev, Dvir, Ran
• Primary Examiner(s): Elms, Richard
• Assistant Examiner(s): NGUYEN, HIEN N
• Application Number:
  US10/211,249
• Publication Number:
  US 20030142544A1
• Time in Patent Office: 1,226 Days
• Field of Search: 365/185.16, 365/185.05, 365/185.24, 365/220, 365/221
• US Class Current: 365/185.16
• CPC Class Codes: G11C 16/0475 comprising two or more independent storage sites which store independent data
• CPC Class Codes: G11C 16/0491 Virtual ground arrays

Abstract

Apparatus including a virtual ground array, which includes memory cells connected in rows and columns to word lines and bit lines, respectively. The virtual ground array includes at least one block of data, and peripheral circuitry adapted to simultaneously access a plurality of subsets of the at least one block of data stored in the memory cells along at least one word line. Methods for operating the virtual ground array in a mass storage device include simultaneously accessing a plurality of subsets of at least one block of data stored in the memory cells along at least one word line.

Claims

1. A method for operating a virtual ground array in a mass storage device wherein said virtual ground array comprises at least one block of data stored in bits along at least one word line, and said operating comprises performing consecutive accesses to subsets of the bits of said at least one block along said at least one word line.

2. The method according to claim 1 wherein said performing consecutive accesses comprises performing parallel accessing of at least one subset of the bits of said at least one block, wherein said at least one subset comprises at least one bit of said at least one block.

3. The method according to claim 1 wherein said performing consecutive accesses comprises performing serial accessing of said at least one subset of the bits of said at least one block, wherein said at least one subset comprises at least one bit of said at least one block.

4. The method according to claim 1 and further comprising performing consecutive accesses to said subsets until a portion of the bits of said at least one block are operated upon.

5. The method according to claim 1 and further comprising performing consecutive accesses to said subsets until all the bits of said at least one block are operated upon.

6. The method according to claim 1 wherein said performing consecutive accesses comprises accessing equal-sized subsets of bits.

7. The method according to claim 1 wherein said performing consecutive accesses comprises accessing unequal-sized subsets of bits.

8. The method according to claim 1 wherein said virtual ground array comprises isolated slices along said at least one word line, and said performing consecutive accesses comprises accessing subsets of bits that are located at the same location in at least two of said virtual ground isolated slices.

9. The method according to claim 1 wherein said operating comprises reading data from one of said subsets and storing said data in a memory location while accessing another one of said subsets.

10. The method according to claim 1 wherein said operating comprises driving said at least one word line to an operating voltage level once per a block operation.

11. A mass storage non-volatile memory device, comprising a virtual ground array that includes memory cells connected in rows and columns to word lines and bit lines, respectively, wherein at least one block of data is stored in bits along at least one word line, to enable consecutive accesses to subsets of the bits.

12. The mass storage non-volatile memory device according to claim 11 wherein said at least one block of data is stored in bits along more than one word line.

13. The mass storage non-volatile memory device according to claim 11 wherein said at least one block of data is partitioned into isolated slices.

14. The mass storage non-volatile memory device according to claim 13 wherein said isolated slices are arranged continuously on a word line.

15. The mass storage non-volatile memory device according to claim 13 wherein said isolated slices are arranged in separate segments on a word line.

16. The mass storage non-volatile memory device according to claim 13 wherein said isolated slices are accessible in parallel.

17. The mass storage non-volatile memory device according to claim 13 wherein said isolated slices are segmented along said bit lines by select transistors into isolated physical sectors (P-sectors).

18. The mass storage non-volatile memory device according to claim 17 wherein a bit line in at least one of said P-sectors comprises a local bit line (LBL) connected through a select transistor to a global bit line (GBL).

19. The mass storage non-volatile memory device according to claim 18 wherein different LBLs corresponding to different P-sectors share a common GBL.

20. The mass storage non-volatile memory device according to claim 18 wherein different LBLs within a P-sector share a common GBL.

21. The mass storage non-volatile memory device according to claim 13 wherein at least one bit in at least one of said isolated slices is accessible through a global bit line.

22. The mass storage non-volatile memory device according to claim 11 and further comprising row decoding circuitry and at least one word line driver adapted to provide access and drive voltages to said word lines.

23. The mass storage non-volatile memory device according to claim 11 wherein at least one of said memory cells comprises a non-conducting charge trapping layer.

24. The mass storage non-volatile memory device according to claim 23 wherein at least one of said memory cells is a nitride, read only memory (NROM) cell.

25. A method for operating a sliced virtual ground array in a mass storage device, said virtual ground array including a plurality of memory cells connected in rows and columns to word lines and bit lines, respectively, the method comprising:

consecutively accessing along at least one word line a plurality of subsets of at least one block of data stored in said memory cells.

26. The method according to claim 25 wherein said operating comprises at least one of reading, programming and erasing.

27. A mass storage non-volatile memory device comprising:

a sliced virtual ground array, mass storage non-volatile memory device, comprising having memory cells connected in rows and columns to word lines and bit lines, respectively, wherein said virtual ground array comprises at least one block of data; and

peripheral circuitry adapted to consecutively access a plurality of subsets of said at least one block of data stored in said memory cells along at least one word line.