Integrated circuit devices having active regions with expanded effective widths
First Claim
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1. An integrated circuit device, comprising:
- a substrate having a trench formed therein;
an isolation layer disposed in the trench so as to cover a first sidewall portion of the trench and an entire bottom of the trench without covering a second sidewall portion of the trench;
a buffer layer disposed between the isolation layer and the trench; and
a gate electrode disposed on the second sidewall portion of the trench and extending onto the substrate adjacent to the trench.
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Abstract
An integrated circuit device includes a substrate that has a trench formed therein. An isolation layer is disposed in the trench and covers a first sidewall portion of the trench. A gate electrode is disposed on a second sidewall portion of the trench.
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Citations
13 Claims
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1. An integrated circuit device, comprising:
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a substrate having a trench formed therein; an isolation layer disposed in the trench so as to cover a first sidewall portion of the trench and an entire bottom of the trench without covering a second sidewall portion of the trench; a buffer layer disposed between the isolation layer and the trench; and a gate electrode disposed on the second sidewall portion of the trench and extending onto the substrate adjacent to the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a semiconductor substrate; a trench which is formed by selectively etching the semiconductor substrate and which is partially filled with an isolation layer such that the lower sidewalls and entire bottom of the trench are covered and the upper sidewalls of the trench are exposed; a buffer layer which is formed at the interface between the isolation layer and the bottom and sidewall of the trench; a gate insulating layer which is formed on upper sidewalls of the exposed trench and an upper surface of the semiconductor substrate; and a gate electrode which is formed on the gate insulating layer. - View Dependent Claims (10, 11, 12, 13)
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Specification