Integrated circuit employable with a power converter
First Claim
1. An integrated circuit employable with a power converter, comprising:
- a power switch of a power train of said power converter formed on a semiconductor substrate; and
a driver switch of a driver configured to provide a drive signal to said power switch and embodied in a transistor, including;
a gate located over a channel region recessed into said semiconductor substrate,a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region,an oppositely doped well located under and within said channel region, anda doped region, located between said heavily doped region and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region.
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Accused Products
Abstract
An integrated circuit employable with a power converter. In one embodiment, the integrated circuit includes a power switch of a power train of the power converter formed on a semiconductor substrate. The integrated circuit also includes a driver switch of a driver configured to provide a drive signal to the power switch and embodied in a transistor including a gate located over a channel region recessed into the semiconductor substrate. The transistor also includes a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor further includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.
247 Citations
30 Claims
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1. An integrated circuit employable with a power converter, comprising:
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a power switch of a power train of said power converter formed on a semiconductor substrate; and a driver switch of a driver configured to provide a drive signal to said power switch and embodied in a transistor, including; a gate located over a channel region recessed into said semiconductor substrate, a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region, an oppositely doped well located under and within said channel region, and a doped region, located between said heavily doped region and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An integrated circuit employable with a power converter, comprising:
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a power switch of a power train of said power converter formed on a semiconductor substrate; a complementary metal oxide semiconductor device employable in a controller configured to provide a signal to control a duty cycle of said power switch and formed on said semiconductor substrate; and a driver switch of a driver configured to provide a drive signal to said power switch as a function of said signal from said controller and embodied in a laterally diffused metal oxide semiconductor device, including; a gate located over a channel region recessed into said semiconductor substrate, a source/drain including a lightly doped region located adjacent said channel region and a heavily doped region located adjacent said lightly doped region, an oppositely doped well located under and within said channel region, and a doped region, located between said heavily doped region and said oppositely doped well, having a doping concentration profile less than a doping concentration profile of said heavily doped region. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification