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Method of manufacture of semiconductor device

  • US 7,271,068 B2
  • Filed: 06/06/2005
  • Issued: 09/18/2007
  • Est. Priority Date: 06/25/2004
  • Status: Active Grant
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First Claim
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1. A manufacturing method of a semiconductor device, comprising the steps of:

  • (a) forming a first semiconductor layer of a first electric conduction type over a main surface of a semiconductor substrate of the first electric conduction type;

    (b) forming a second semiconductor layer of a second electric conduction type in the first semiconductor layer by introducing impurities of the second electric conduction type of a polarity contrary to the first electric conduction type;

    (c) in the main surface of the semiconductor substrate, forming a first groove portion which penetrates the second semiconductor layer in a first area, and forming a second groove portion which penetrates the second semiconductor layer in a second area;

    (d) forming a first insulation film in the first groove portion and in the second groove portion;

    (e) after step (d), forming a first conductivity film over the semiconductor substrate, and embedding the first groove portion and the second groove portion by the first conductivity film;

    (f) after step (e), removing the first conductivity film which forms out of the first groove portion for a first depth from an opening of the first groove portion in the first area, and leaving the first conductivity film which embeds the second groove portion and the first conductivity film which extends and exists in determined amount out of the second groove in the second area, wherein in the step (f), a third groove portion is formed in a part of the first conductivity film extending and existing out of the second groove portion in the second area;

    (g) forming a third semiconductor layer of the first electric conduction type in the second semiconductor layer which adjoins the first groove portion by introducing impurities of the first electric conduction type into the second semiconductor layer of the first area;

    (h) after the step (g), forming a second insulation film over the semiconductor substrate so such that the second insulation film embeds the first depth of the first groove portion in the first area and forms over the first conductivity film extending and existing out of the second groove portion in the second area, wherein in the step (h), the third groove portion is embedded with the second insulation film;

    (i) after the step (h), removing the second insulation film which forms out of the first groove portion in the first area, and removing a part of the second insulation film which forms over the first conductivity film extending and existing out of the second groove portion in the second area and forming a first opening that reaches the first conductivity film extending and existing out of the second groove portion in the second area; and

    (j) after the step (i), forming a first wiring electrically connected to the third semiconductor layer over the semiconductor substrate of the first area, and forming a second wiring electrically connected to the first conductivity film under the first opening over the semiconductor substrate of the second area;

    wherein in the first area, the first semiconductor layer is a drain, the second semiconductor layer is a channel, and the third semiconductor layer is a source.

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