Multiple oxide thicknesses for merged memory and logic applications
First Claim
1. A semiconductor device, comprising:
- a logic device formed on a top surface of a silicon wafer, wherein the top surface has a (110) crystal plane orientation, the logic device having a logic gate separated from the top surface by a logic gate oxide; and
an EEPROM (Electronically Erasable Programmable Read Only Memory) device formed on a trench wall of the silicon wafer, the EEPROM device having an EEPROM gate separated from the trench wall by a EEPROM gate oxide, wherein the trench wall has a different order plane-orientation than the top surface and wherein a thickness of the logic gate oxide is different from a thickness of the EEPROM gate oxide.
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Abstract
Structures are provided for multiple oxide thicknesses on a single silicon wafer. In particular, structures are provided for multiple gate oxide thicknesses on a single chip. The chip can include circuitry including but not limited to the memory and logic technologies. These structures for multiple oxide thickness on a single silicon wafer can be used in conjunction with existing fabrication and processing techniques with minimal or no added complexity. One structure includes a top layer of SiO2 on a top surface of a silicon wafer and a trench layer of SiO2 on a trench wall of the silicon wafer. The trench wall of the silicon wafer has a different order plane-orientation than the top surface. The thickness of the top layer is different from a thickness of the trench layer.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a logic device formed on a top surface of a silicon wafer, wherein the top surface has a (110) crystal plane orientation, the logic device having a logic gate separated from the top surface by a logic gate oxide; and an EEPROM (Electronically Erasable Programmable Read Only Memory) device formed on a trench wall of the silicon wafer, the EEPROM device having an EEPROM gate separated from the trench wall by a EEPROM gate oxide, wherein the trench wall has a different order plane-orientation than the top surface and wherein a thickness of the logic gate oxide is different from a thickness of the EEPROM gate oxide. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An electronic system comprising:
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a processor; and a flash memory device including; a logic device formed on a top surface of a silicon wafer, wherein the top surface has a (111) crystal plane orientation, the logic device having a logic gate separated from the top surface by a logic gate oxide; and a flash memory cell formed on a trench wall of the silicon wafer, wherein the trench wall has a (110) crystal plane orientation, the flash memory cell having a flash gate separated from the trench wall by a flash gate oxide, wherein a thickness of the flash gate oxide is different from the logic gate oxide. - View Dependent Claims (8, 9, 10, 11, 12)
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13. An electronic system comprising:
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a processor; and a decode circuit, comprising; a logic circuit formed on a top surface of a silicon wafer, wherein the top layer as a (110) crystal plane orientation, the logic circuit having a logic gate separated from the top layer by a logic gate oxide; and an EEPROM (Electronically Erasable Programmable Read Only Memory) device formed on a trench wall of the silicon wafer, the EEPROM device having an EEPROM gate separated from the trench wall by a EEPROM gate oxide, wherein the trench wall has a different order plane-orientation than the top surface and wherein a thickness of the EEPROM gate oxide is different from a thickness of the logic gate oxide. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor device, comprising,
a logic device formed on a top surface of a silicon wafer having a (100) crystal plane orientation and a top gate oxide; - and
an EEPROM device formed on a trench wall of the silicon wafer, the trench wall having a (110) crystal plane orientation and a trench gate oxide. - View Dependent Claims (19, 20)
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Specification