Pattern forming method, mask manufacturing method, and LSI manufacturing method
First Claim
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1. A pattern forming method comprising:
- checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern;
dividing a design pattern size into small areas each of which is smaller than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the, device group;
acquiring correction information of the size of the pattern of each of the small areas by using the wide range size change characteristic; and
forming a desired pattern based on the acquired correction information, wherein, checking the wide range size change includes checking two correlations of a correlation between a position and a size change in a chip on a wafer or two or more chips and a correlation between a pattern characteristic and a size change.
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Abstract
A pattern forming method includes the steps of checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern; dividing a design pattern size into a smaller area than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the device group; acquiring correction information of the size of the pattern of each the small area by using the size change characteristic; and forming a desired pattern based on the acquired correction information.
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Citations
8 Claims
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1. A pattern forming method comprising:
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checking a wide range size change characteristic for each device in a case of using a device group used for forming a pattern; dividing a design pattern size into small areas each of which is smaller than a standard distance to which a predetermined size change is caused, when the pattern is formed on a sample by using the, device group; acquiring correction information of the size of the pattern of each of the small areas by using the wide range size change characteristic; and forming a desired pattern based on the acquired correction information, wherein, checking the wide range size change includes checking two correlations of a correlation between a position and a size change in a chip on a wafer or two or more chips and a correlation between a pattern characteristic and a size change. - View Dependent Claims (2, 3)
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4. A manufacturing method of a mask comprising:
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checking a correlation of a position and a size change and a correlations of a pattern characteristic and a size change on the mask in a case of using a device group used for manufacturing the mask; correcting a design pattern size for small areas each of which is smaller than a standard distance to which a predetermined size change is caused by using data of each correlation, when the mask is manufactured by using the device group; and forming a desired pattern on the mask based on the corrected design pattern size, wherein, checking the size change includes checking two correlations of a correlation between a position and a size change in a chip on a wafer or two or more chips and a correlation between a pattern characteristic and a size change.
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5. A manufacturing method of an LSI comprising:
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checking a correlation of a position and a size change and a correlation of a pattern characteristic and a size change in a chip on a wafer or a chip group in a case of using a device group used for a manufacturing process of the LSI; correcting a design pattern size for smaller areas each of which is smaller than a standard distance to which a predetermined size change is caused by using data of the each correlation, when the LSI is manufactured by using the device group; forming a desired pattern on a mask based on the corrected design pattern size; and manufacturing the LSI by using the mask on which the desired pattern is formed, wherein, checking the size change includes checking two correlations of a correlation between a position and a size change in a chip on a wafer or two or more chips and a correlation between a pattern characteristic and a size change.
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6. A manufacturing method of a mask comprising:
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checking a correlation of a position and a size change and a correlations of a pattern characteristic and a size change on the mask in a case of using at least one of a plurality of devices used for manufacturing the mask; correcting a design pattern size for smaller areas each of which is smaller than a standard distance to which a predetermined size change is caused by using data of the each correlation, when the mask is manufactured by using the each of the plurality of devices device; and forming a desired pattern based on the corrected design pattern size, wherein, checking ihe size change includes checking two correlations of a correlation between a position and a size change in a chip on a wafer or two or more chips and a correlation between a panern characteristic and a size change.
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7. A manufacturing method of an LSI comprising:
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checking a first correlation of a position and a size change and a second correlation of a pattern characteristic and a size change in a chip on a wafer or a chip group in a case of using at least one of a plurality of devices used for a manufacturing process of the LSI; correcting a design pattern size for smaller areas each of which is smaller than a standard distance to which a predetermined size change is caused by using data of the each of first and second correlations, when the LSI is manufactured by using the each of the plurality of devices; forming a desired pattern on a mask based on the corrected design pattern size; and manufacturing the LSI by using the mask on which the desired pattern is formed, wherein, checking the size change includes checking two correlations of a correlation between a position and a size change in a chip on a wafer or two or more chips and a correlation between a pattern characteristic and a size change. - View Dependent Claims (8)
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Specification