Method of manufacturing a semiconductor device

• US 7,351,605 B2
• Filed: 11/23/2004
• Issued: 04/01/2008
• Est. Priority Date: 04/09/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yonezawa, Masato, Kimura, Hajime, Watanabe, Yasuko, Koyama, Jun, Yamazaki, Yu
• Primary Examiner(s): Pham; Long
• Application Number:
  US10/994,390
• Publication Number:
  US 20050093037A1
• Time in Patent Office: 1,225 Days
• Field of Search: 438/96, 438/48, 438/57, 438/59, 438/97
• US Class Current: 438/96
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14665 Imagers using a photoconductor layer
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body

Abstract

The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a first semiconductor layer and a second semiconductor layer on an insulating surface;

forming an insulating film over the first semiconductor layer and the second semiconductor layer;

forming a contact hole in the insulating film; and

forming a photoelectric conversion layer over the insulating film so as to be in contact with the first semiconductor layer and the second semiconductor layer through the contact hole,

wherein a conductivity of the first semiconductor layer is opposite to that of the second semiconductor layer.

2. The method according to claim 1, wherein the conductivity of the first semiconductor layer is n-type and the conductivity of the second semiconductor layer is p-type.

3. The method according to claim 1 wherein each of the first semiconductor layer and the second semiconductor layer is a crystalline semiconductor layer.

4. The method according to claim 1, wherein the photoelectric conversion layer is an amorphous semiconductor layer.

5. The method according to claim 1, wherein the semiconductor device is an electronic equipment selected from the group consisting of a video camera, a digital camera, a laptop computer, a portable information terminal, a mobile computer, a mobile telephone, a mobile game equipment, and an electronic book.

6. A method of manufacturing a semiconductor device comprising:

forming a first semiconductor layer and a second semiconductor layer on an insulating surface;

forming an insulating film over the first semiconductor layer and the second semiconductor layer;

forming a photoelectric conversion layer between the first semiconductor layer and the second semiconductor layer so as to be in contact with the first semiconductor layer and the second semiconductor layer,

wherein a conductivity of the first semiconductor layer is opposite to that of the second semiconductor layer,

wherein each of the first semiconductor layer and the second semiconductor layer is a crystalline semiconductor layer, and

wherein the photoelectric conversion layer is an amorphous semiconductor layer.

7. The method according to claim 6, wherein the conductivity of the first semiconductor layer is n-type and the conductivity of the second semiconductor layer is p-type.

8. The method according to claim 6, wherein the semiconductor device is an electronic equipment selected from the group consisting of a video camera, a digital camera, a laptop computer, a portable information terminal, a mobile computer, a mobile telephone, a mobile game equipment, and an electronic book.

9. The method according to claim 6, wherein the photoelectric conversion layer is formed over the insulating film.