Method of manufacturing a semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising:
- forming a first semiconductor layer and a second semiconductor layer on an insulating surface;
forming an insulating film over the first semiconductor layer and the second semiconductor layer;
forming a contact hole in the insulating film; and
forming a photoelectric conversion layer over the insulating film so as to be in contact with the first semiconductor layer and the second semiconductor layer through the contact hole,wherein a conductivity of the first semiconductor layer is opposite to that of the second semiconductor layer.
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Abstract
The number of masks is reduced in a method of manufacturing a semiconductor device that has a transistor and a photoelectric conversion element on an insulating surface. In a manufacturing method of the present invention, semiconductor layers functioning as a source region, a drain region, and a channel formation region of a transistor are formed at the same time an n type semiconductor layer and p type semiconductor layer of a photoelectric conversion element are formed. Connection wiring lines to be electrically connected to the n type semiconductor layer and p type semiconductor layer of the photoelectric conversion element are formed at the same time a source wiring line and a drain wiring line of a transistor are formed. In a doping step using an impurity element that gives one conductivity type, a semiconductor layer of an n-channel transistor and the n type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element and a semiconductor layer of a p-channel transistor and the p type semiconductor layer of the photoelectric conversion element are simultaneously doped with the impurity element.
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Citations
9 Claims
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1. A method of manufacturing a semiconductor device comprising:
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forming a first semiconductor layer and a second semiconductor layer on an insulating surface; forming an insulating film over the first semiconductor layer and the second semiconductor layer; forming a contact hole in the insulating film; and forming a photoelectric conversion layer over the insulating film so as to be in contact with the first semiconductor layer and the second semiconductor layer through the contact hole, wherein a conductivity of the first semiconductor layer is opposite to that of the second semiconductor layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing a semiconductor device comprising:
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forming a first semiconductor layer and a second semiconductor layer on an insulating surface; forming an insulating film over the first semiconductor layer and the second semiconductor layer; forming a photoelectric conversion layer between the first semiconductor layer and the second semiconductor layer so as to be in contact with the first semiconductor layer and the second semiconductor layer, wherein a conductivity of the first semiconductor layer is opposite to that of the second semiconductor layer, wherein each of the first semiconductor layer and the second semiconductor layer is a crystalline semiconductor layer, and wherein the photoelectric conversion layer is an amorphous semiconductor layer. - View Dependent Claims (7, 8, 9)
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Specification