Method for forming insulation film
First Claim
1. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:
- vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—
O bond in a molecule;
introducing a reaction gas comprising the source gas and a carrier gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and
forming an insulation film constituted by Si, O, H, and optionally C or N on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦
Rt,
Rt[s]=9.42×
107(Pr·
Ts/Ps·
Tr)rw2d/Fwherein;
Pr;
reaction space pressure (Pa)Ps;
standard atmospheric pressure (Pa)Tr;
average temperature of the reaction (K)Ts;
standard temperature (K)rw;
radius of the silicon substrate (m)d;
space between the silicon substrate and the upper electrode (m)F;
total flow volume of the reaction gas (sccm).
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Accused Products
Abstract
A method for forming an insulation film having filling property on a semiconductor substrate by plasma reaction includes: vaporizing a silicon-containing hydrocarbon having a Si—O bond compound to provide a source gas; introducing the source gas and a carrier gas without an oxidizing gas into a reaction space for plasma CVD processing; and forming an insulation film constituted by Si, O, H, and optionally C or N on a substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space. The plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space.
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Citations
40 Claims
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1. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:
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vaporizing a silicon-containing hydrocarbon compound to provide a source gas, said silicon-containing hydrocarbon compound comprising a Si—
O bond in a molecule;introducing a reaction gas comprising the source gas and a carrier gas into a reaction space for plasma CVD processing wherein a semiconductor substrate is placed; and forming an insulation film constituted by Si, O, H, and optionally C or N on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦
Rt,
Rt[s]=9.42×
107(Pr·
Ts/Ps·
Tr)rw2d/Fwherein; Pr;
reaction space pressure (Pa)Ps;
standard atmospheric pressure (Pa)Tr;
average temperature of the reaction (K)Ts;
standard temperature (K)rw;
radius of the silicon substrate (m)d;
space between the silicon substrate and the upper electrode (m)F;
total flow volume of the reaction gas (sccm). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method for forming an insulation film on a semiconductor substrate by plasma reaction, comprising the steps of:
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performing, as a preliminary treatment, plasma treatment of a semiconductor substrate which is placed in a reaction space for plasma CVD processing, using an auxiliary gas selected from the group consisting of He, O2, and a gas constituted by C, H, and optionally O; vaporizing a silicon-containing hydrocarbon compound to provide a source gas; introducing a reaction gas comprising the source gas, a carrier gas, and an additive gas into the reaction space, said additive gas being selected from the group consisting of H2 gas and a gas of CxHyOz wherein x=1-10, y=a natural number, and z=0, 1, or 2, into the reaction space; and forming an insulation film constituted by Si, O, H, and optionally C or N on the substrate by plasma reaction using a combination of low-frequency RF power and high-frequency RF power in the reaction space, wherein the plasma reaction is activated while controlling the flow of the reaction gas to lengthen a residence time, Rt, of the reaction gas in the reaction space, wherein 100 msec≦
Rt,
Rt[s]=9.42×
107(Pr·
Ts/Ps·
Tr)rw2d/Fwherein; Pr;
reaction space pressure (Pa)Ps;
standard atmospheric pressure (Pa)Tr;
average temperature of the reaction (K)Ts;
standard temperature (K)rw;
radius of the silicon substrate (m)d;
space between the silicon substrate and the upper electrode (m)F;
total flow volume of the reaction gas (sccm). - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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Specification