Semiconductor device and method for manufacturing the same, and electric appliance
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- selectively forming a release layer over a first substrate;
forming a first insulating layer over the first substrate with the release layer interposed therebetween;
forming a plurality of thin film transistors over the first insulating layer;
forming a second insulating layer over the first insulating layer;
forming a first opening portion in the first insulating layer and the second insulating layer so that a portion of the first substrate is exposed;
forming a second opening portion in the second insulating layer so that at least one of source and drain regions of the plurality of thin film transistors is exposed;
forming a first conductive layer for filling the first opening portion and a second conductive layer for filling the second opening portion;
forming a third opening portion in the first insulating layer and the second insulating layer to expose a portion of the release layer;
removing the release layer by introducing etchant into the third opening portion;
attaching the plurality of thin film transistors to a second substrate so that the second conductive layer is connected to a third conductive layer provided over the second substrate;
separating the plurality of thin film transistors from the first substrate; and
attaching the plurality of thin film transistors to a third substrate so that the first conductive layer is connected to a fourth conductive layer provided over the third substrate.
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Accused Products
Abstract
The present invention provides a semiconductor device having a plurality of functions and a method for manufacturing the semiconductor device. The semiconductor device comprises a thin film integrated circuit, a first substrate having a sensor or an antenna, and a second substrate having an antenna, wherein the thin film integrated circuit is interposed between the first substrate having a sensor or an antenna and the second substrate having an antenna. In the case that the semiconductor device has a plurality of antennas and the semiconductor device communicates in different frequency bands, the semiconductor device can receive a plurality of frequency bands, and so the range of choice of the reader/writer is expanded. In the case that the semiconductor device has a sensor and an antenna, information detected by the sensor can be converted to signals and the signals can be output to a reader/writer via the antenna. Therefore, the semiconductor device is added with higher value than that of the conventional semiconductor device such as a wireless chip.
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Citations
31 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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selectively forming a release layer over a first substrate; forming a first insulating layer over the first substrate with the release layer interposed therebetween; forming a plurality of thin film transistors over the first insulating layer; forming a second insulating layer over the first insulating layer; forming a first opening portion in the first insulating layer and the second insulating layer so that a portion of the first substrate is exposed; forming a second opening portion in the second insulating layer so that at least one of source and drain regions of the plurality of thin film transistors is exposed; forming a first conductive layer for filling the first opening portion and a second conductive layer for filling the second opening portion; forming a third opening portion in the first insulating layer and the second insulating layer to expose a portion of the release layer; removing the release layer by introducing etchant into the third opening portion; attaching the plurality of thin film transistors to a second substrate so that the second conductive layer is connected to a third conductive layer provided over the second substrate; separating the plurality of thin film transistors from the first substrate; and attaching the plurality of thin film transistors to a third substrate so that the first conductive layer is connected to a fourth conductive layer provided over the third substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising the steps of:
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selectively forming a release layer over a first substrate; forming a first insulating layer over the first substrate with the release layer interposed therebetween; forming a plurality of thin film transistors over the first insulating layer; forming a second insulating layer over the first insulating layer; forming a first opening portion in the first insulating layer and the second insulating layer so that a portion of the first substrate is exposed; forming a second opening portion in the second insulating layer so that at least one of source and drain regions of the plurality of thin film transistors is exposed; forming a first conductive layer for filling the first opening portion and a second conductive layer for filling the second opening portion; forming a third opening portion in the first insulating layer and the second insulating layer to expose a portion of the release layer; selectively removing the release layer by introducing etchant into the third opening portion; attaching the plurality of thin film transistors to a second substrate so that the second conductive layer is connected to a third conductive layer provided over the second substrate; separating the plurality of thin film transistors from the first substrate by a physical force; and attaching the plurality of thin film transistors to a third substrate so that the first conductive layer is connected to a fourth conductive layer provided over the third substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a thin film integrated circuit; a first substrate having a sensor; a first resin including a first conductive particle between the thin film integrated circuit and the first substrate having the sensor; a second substrate having an antenna; and a second resin including a second conductive particle between the thin film integrated circuit and the second substrate having the antenna, wherein the thin film integrated circuit is interposed between the first substrate having the sensor and the second substrate;
having the antenna, andwherein the thin film integrated circuit is electrically connected to the sensor via the first resin including the first conductive particle and is electrically connected to the antenna via the second resin including the second conductive particle. - View Dependent Claims (18, 19)
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20. A semiconductor device comprising:
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a thin film integrated circuit; a first substrate having a first antenna; a first resin including a first conductive particle between the thin film integrated circuit and the first substrate having the first antenna; a second substrate having a second antenna; and a second resin including a second conductive particle between the thin film integrated circuit and the second substrate having the second antenna, wherein the thin film integrated circuit is interposed between the first substrate having the first antenna and the second substrate having the second antenna, and wherein the thin film integrated circuit is electrically connected to the first antenna via the first resin including the first conductive particle and is electrically connected to the second antenna via the second resin including the second conductive particle. - View Dependent Claims (21, 22)
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23. A semiconductor device comprising:
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a first conductive layer provided over a first substrate; a first insulating layer covering the first conductive layer; a first thin film transistor and a second thin film transistor which are provided over the first insulating layer; a second insulating layer covering the first thin film transistor and the second thin film transistor; a second conductive layer and a third conductive layer which are provided over the second insulating layer; and a fourth conductive layer provided over a second substrate; wherein the second conductive layer is connected to at least one of source and drain regions of the first thin film transistor via a first opening portion provided in the second insulating layer and to the first conductive layer via a second opening portion provided in the first insulating layer and the second insulating layer, and the third conductive layer is connected to at least one of source and drain regions of the second thin film transistor via a third opening portion provided in the second insulating layer and to the fourth conductive layer. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31)
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Specification