Pattern forming method, arranged fine particle pattern forming method, conductive pattern forming method, and conductive pattern material

• US 7,393,567 B2
• Filed: 03/23/2005
• Issued: 07/01/2008
• Est. Priority Date: 03/23/2004
• Status: Expired due to Fees

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Kawamura, Koichi
• Primary Examiner(s): Berman; Susan W
• Application Number:
  US11/086,429
• Publication Number:
  US 20050215721A1
• Time in Patent Office: 1,196 Days
• Field of Search: 522/172, 522/174, 522/185, 430/270.1, 430/286.1, 427/466
• US Class Current: 427/466
• CPC Class Codes: C23C 18/1608 from pretreatment step, i.e. selective pre-treatment
• CPC Class Codes: C23C 18/1612 through irradiation means
• CPC Class Codes: C23C 18/1868 Radiation, e.g. UV, laser
• CPC Class Codes: C23C 18/1893 with use of organic or inorganic compounds other than metals, first
• CPC Class Codes: C23C 18/204 Radiation, e.g. UV, laser
• CPC Class Codes: C23C 18/2086 with use of organic or inorganic compounds other than metals, first
• CPC Class Codes: C23C 18/30 Activating or accelerating or sensitising with palladium or other noble metal
• CPC Class Codes: C23C 18/405 Formaldehyde
• CPC Class Codes: C23C 18/44 using reducing agents
• CPC Class Codes: C23C 18/50 with alloys based on iron, cobalt or nickel
• CPC Class Codes: G03F 7/029 Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
• CPC Class Codes: G03F 7/165 Monolayers, e.g. Langmuir-Blodgett
• CPC Class Codes: H05K 2203/1157 Using means for chemical reduction
• CPC Class Codes: H05K 2203/1168 Graft-polymerization
• CPC Class Codes: H05K 3/185 by making a catalytic pattern by photo-imaging
• CPC Class Codes: H05K 3/389 by the use of a coupling agent, e.g. silane

Abstract

The present invention provides a pattern forming method comprising bonding a compound to a substrate, the compound having both a polymerization initiating moiety capable of undergoing photocleavage to initiate radical polymerization and a substrate bonding moiety, contacting a radical-polymerizable unsaturated compound with the substrate, and exposing light thereto patternwise, so as to form a region where a graft polymer is generated and a region where a graft polymer is not generated. A conductive pattern forming method applying the pattern forming method, and a conductive pattern material obtained by the conductive film forming method.

Claims

1. A pattern forming method comprising:

(a) bonding a compound to a substrate, the compound having both a polymerization initiating moiety capable of undergoing photocleavage to initiate radical polymerization and a substrate bonding moiety,

(b) contacting a radical-polymerizable unsaturated hydrophilic polymer with the substrate wherein the radical-polymerizable unsaturated hydrophilic polymer is formed by reacting a functional group of a hydrophilic polymer with a monomer having an ethylene addition-polymerizable unsaturated group; and

(c) applying light to the substrate of step (b) patternwise to form a region where a graft polymer is generated and a region where a graft polymer is not generated.

2. The pattern forming method according to claim 1, wherein the polymerization initiating moiety contains a bond selected from the group consisting of a C—

C bond, a C—

N bond, a C—

O bond, a C—

Cl bond, a N—

O bond, and a S—

N bond.

3. The pattern forming method according to claim 1, wherein the graft polymer has a hydrophilic group on its side chain.

4. The pattern forming method according to claim 1, wherein the hydrophilic polymer includes a carboxyl group.

5. The pattern forming method according to claim 1, wherein the monomer having an ethylene addition-polymerizable unsaturated group is selected from the group consisting of (meth)acrylic acid, glycidyl (meth)acrylate, allyl glycidyl ether, 2-isocyanato ethyl (meth)acrylate and 2-methacryloyloxyethyl isocyanate.