Thermal interface apparatus, systems, and methods
First Claim
Patent Images
1. An apparatus, comprising:
- an integrated circuit package substrate having a first surface area;
a first material comprising a continuous metal layer of uniform thickness coupled to the integrated circuit package substrate and having a first coefficient of thermal expansion, and further having a second surface area; and
a second material comprising a continuous metal layer of uniform thickness adjacent to the first material coupled to the integrated circuit package substrate and having a second coefficient of thermal expansion different from the first coefficient of thermal expansion to reduce an amount of warp across a surface of the integrated circuit package substrate within a selected temperature range, and further having a third surface area;
wherein the second and third surface areas are substantially similar;
wherein the first material and the second material are embedded in the integrated circuit package substrate;
wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and
wherein the first material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the second material.
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Abstract
An apparatus and system, as well as fabrication methods therefor, may include a substrate coupled to a first material and a second material. The first and second materials may comprise adjacent metals, and may have different coefficients of thermal expansion sufficient to reduce the amount of substrate warp that can occur due to heating and cooling.
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Citations
24 Claims
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1. An apparatus, comprising:
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an integrated circuit package substrate having a first surface area; a first material comprising a continuous metal layer of uniform thickness coupled to the integrated circuit package substrate and having a first coefficient of thermal expansion, and further having a second surface area; and a second material comprising a continuous metal layer of uniform thickness adjacent to the first material coupled to the integrated circuit package substrate and having a second coefficient of thermal expansion different from the first coefficient of thermal expansion to reduce an amount of warp across a surface of the integrated circuit package substrate within a selected temperature range, and further having a third surface area; wherein the second and third surface areas are substantially similar; wherein the first material and the second material are embedded in the integrated circuit package substrate; wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and wherein the first material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the second material. - View Dependent Claims (2, 3, 4, 5)
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6. A system, comprising:
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a wireless transceiver; an integrated circuit package substrate coupled to the wireless transceiver; a first material comprising a continuous metal layer coupled to the integrated circuit package substrate and having a first coefficient of thermal expansion; and a second material comprising a continuous metal layer adjacent to the first material coupled to the integrated circuit package substrate and having a second coefficient of thermal expansion different from the first coefficient of thermal expansion; wherein the first material and the second material are embedded in the integrated circuit package substrate; wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and wherein the first material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the second material. - View Dependent Claims (7, 8, 9)
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10. A method, comprising:
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coupling a first material comprising a continuous metal layer having a first coefficient of thermal expansion to an integrated circuit package substrate; coupling a second material comprising a continuous metal layer adjacent to the first material coupled to the integrated circuit package substrate, the second material having a second coefficient of thermal expansion different from the first coefficient of thermal expansion; and coupling the first material to the second material; wherein the first material and the second material are embedded in the integrated circuit package substrate; wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and wherein the first material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the second material. - View Dependent Claims (11, 12, 13, 14)
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15. An apparatus, comprising:
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an integrated circuit package substrate; a first material comprising a continuous metal layer coupled to the integrated circuit package substrate and having a first coefficient of thermal expansion; and a second material comprising a continuous metal layer adjacent to the first material coupled to the integrated circuit package substrate and having a second coefficient of thermal expansion different from the first coefficient of thermal expansion; wherein the first material and the second material are embedded in the integrated circuit package substrate; wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and wherein the first material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the second material. - View Dependent Claims (16, 17, 18, 19)
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20. An apparatus, comprising:
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an integrated circuit package substrate; a first material comprising a continuous metal layer coupled to the integrated circuit package substrate and having a first coefficient of thermal expansion; and a second material comprising a continuous metal layer adjacent to the first material coupled to the integrated circuit package substrate and having a second coefficient of thermal expansion different from the first coefficient of thermal expansion; wherein the first material and the second material are embedded in the integrated circuit package substrate; wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and wherein the second material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the first material. - View Dependent Claims (21, 22, 23, 24)
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Specification