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Thermal interface apparatus, systems, and methods

  • US 7,400,040 B2
  • Filed: 06/10/2003
  • Issued: 07/15/2008
  • Est. Priority Date: 06/10/2003
  • Status: Active Grant
First Claim
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1. An apparatus, comprising:

  • an integrated circuit package substrate having a first surface area;

    a first material comprising a continuous metal layer of uniform thickness coupled to the integrated circuit package substrate and having a first coefficient of thermal expansion, and further having a second surface area; and

    a second material comprising a continuous metal layer of uniform thickness adjacent to the first material coupled to the integrated circuit package substrate and having a second coefficient of thermal expansion different from the first coefficient of thermal expansion to reduce an amount of warp across a surface of the integrated circuit package substrate within a selected temperature range, and further having a third surface area;

    wherein the second and third surface areas are substantially similar;

    wherein the first material and the second material are embedded in the integrated circuit package substrate;

    wherein the first material is located between the second material and a die coupled to the integrated circuit package substrate; and

    wherein the first material has a higher coefficient of thermal expansion than a coefficient of thermal expansion of the second material.

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