Use of silyating agents
First Claim
1. A method of passivating a semiconductor substrate comprising a dielectric film to moisture absorption comprising:
- processing the dielectric film of the substrate in manner that causes the dielectric constant of the dielectric film to increase; and
after said processing, exposing the dielectric film of the substrate to a composition in a manner so as to reduce the dielectric constant of the dielectric film, wherein the composition comprises at least one silyating agent and at least one substantially non-flammable ether.
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Accused Products
Abstract
The present invention provides improvements to the use of silyating agents in semiconductor processing. More particularly, the silyating agents may be provided in combination with a substantially non-flammable ether, so that the combination is substantially non-flammable. Additionally, the silyating agent may be utilized in vapor form, or applied in conjunction with the electromagnetic radiation. Each of these embodiments can enhance the usability of the silyating agent, i.e., by rendering the silyating agent more safe, more easily utilized in a variety of processing equipment and/or by enhancing the passivation efficacy/efficiency of the silyating agent.
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Citations
30 Claims
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1. A method of passivating a semiconductor substrate comprising a dielectric film to moisture absorption comprising:
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processing the dielectric film of the substrate in manner that causes the dielectric constant of the dielectric film to increase; and after said processing, exposing the dielectric film of the substrate to a composition in a manner so as to reduce the dielectric constant of the dielectric film, wherein the composition comprises at least one silyating agent and at least one substantially non-flammable ether. - View Dependent Claims (2, 3, 4, 5, 6, 15, 16)
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7. A method of passivating a semiconductor substrate comprising a dielectric film to moisture absorption comprising:
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processing the dielectric film of the substrate in manner that causes the dielectric constant of the dielectric film to increase; and after said processing, exposing the dielectric film of the substrate to a vapor in a manner so as to reduce the dielectric constant of the dielectric film, wherein the vapor comprises at least one silyating agent and at least one substantially non-flammable ether. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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17. A method of passivating a semiconductor substrate comprising a dielectric film having an upper and a lower surface to moisture absorption comprising:
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processing the dielectric film of the substrate in manner that causes the dielectric constant of the dielectric film to increase; and after said processing, performing the steps comprising; exposing the dielectric film of the substrate to at least one silyating agent; and exposing the substrate to broadband ultraviolet radiation, wherein said exposing steps are performed in a manner so as to reduce the dielectric constant of the dielectric film. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A single processing chamber method for passivating a semiconductor substrate comprising a dielectric film to moisture absorption following a residue removal step comprising:
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placing the substrate within the processing chamber, wherein while the substrate is positioned in the processing chamber performing steps comprising; a first exposing step comprising exposing at least a portion of the substrate to a residue removal composition in a manner so as to expose the dielectric film, wherein the dielectric film has an increased dielectric constant due to processing; and after said first exposing a second exposing step comprising exposing at least a portion of the dielectric film of the substrate to a silvating composition comprising at least one silyating agent in a manner so as to reduce the dielectric constant of the dielectric film. - View Dependent Claims (27, 28, 29, 30)
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Specification