Semiconductor device
First Claim
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1. A semiconductor device comprising:
- an antenna formed on a first substrate;
an IC chip formed on a second substrate and mounted on the first substrate, the IC chip comprising;
a memory unit having a first thin film transistor, the memory unit comprising;
a data holding unit having a plurality of memory cells; and
an address selecting unit comprising;
a column-decoder; and
a row decoder;
a control unit having a second thin film transistor formed on the second substrate, the control unit configured to control the memory unit; and
a power generation unit having a third thin film transistor formed on the second substrate, the power generation unit configured to supply a power to the memory unit and the control unit.
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Abstract
The semiconductor device in which reading and writing of data can be accurately performed by preventing malfunction even when a selection of address delays. The semiconductor device has three factors of a data holding unit, a precharge unit and a delay unit. The data holding unit includes a plurality of memory cells. The precharge unit includes a precharge potential line, a precharge signal line and a plurality of switches. The delay unit includes a plurality of transistors. In addition, it has one or both of an address selecting unit having a column-decoder and a row-decoder and a display unit having a plurality of pixels, as well as the three factors.
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Citations
24 Claims
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1. A semiconductor device comprising:
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an antenna formed on a first substrate; an IC chip formed on a second substrate and mounted on the first substrate, the IC chip comprising; a memory unit having a first thin film transistor, the memory unit comprising; a data holding unit having a plurality of memory cells; and an address selecting unit comprising; a column-decoder; and a row decoder; a control unit having a second thin film transistor formed on the second substrate, the control unit configured to control the memory unit; and a power generation unit having a third thin film transistor formed on the second substrate, the power generation unit configured to supply a power to the memory unit and the control unit. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an antenna formed on a substrate; an IC chip formed on the substrate, the IC chip comprising; a memory unit having a first thin film transistor, the memory unit comprising; a data holding unit having a plurality of memory cells; and an address selecting unit comprising; a column-decoder; and a row decoder; a control unit having a second thin film transistor formed on the substrate, the control unit configured to control the memory unit; and a power generation unit having a third thin film transistor formed on the substrate, the power generation unit configured to supply a power to the memory unit and the control unit. - View Dependent Claims (8, 9, 10, 11)
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12. A semiconductor device comprising:
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an antenna formed on a first substrate; an IC chip formed on a second substrate and mounted on the first substrate, the IC chip comprising; a memory unit having a first thin film transistor, the memory unit comprising; a data holding unit having a plurality of memory cells; an address selecting unit comprising; a column-decoder; and a row decoder; a precharge unit electrically connected to the data holding unit, comprising; a precharge potential line; a plurality of switches electrically connected to the precharge potential line; and a precharge signal line electrically connected to the plurality of switches; and a delay unit electrically connected to the precharge signal line; a control unit having a second thin film transistor formed on the second substrate, the control unit configured to control the memory unit; and a power generation unit having a third thin film transistor formed on the second substrate, the power generation unit configured to supply a power to the memory unit and the control unit. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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an antenna formed on a substrate; an IC chip formed on the substrate, the IC chip comprising; a memory unit having a first thin film transistor, the memory unit comprising; a data holding unit having a plurality of memory cells; an address selecting unit comprising; a column-decoder; and a row decoder; a precharge unit electrically connected to the data holding unit, comprising; a precharge potential line; a plurality of switches electrically connected to the precharge potential line; and a precharge signal line electrically connected to the plurality of switches; and a delay unit electrically connected to the precharge signal line; a control unit having a second thin film transistor formed on the substrate, the control unit configured to control the memory unit; and a power generation unit having a third thin film transistor formed on the substrate, the power generation unit configured to supply a power to the memory unit and the control unit. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification