Cleaning method and solution for cleaning a wafer in a single wafer process
First Claim
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1. A cleaning solution formed from a mixture comprising:
- NH4OH;
H2O2;
H2O;
a chelating agent selected from the group consisting of N,N′
-Bis(2-hydroxyphenyl)ethylenediiminodiacetic acid (HPED) and molybdic acid; and
a surfactant.
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Abstract
The present invention is a novel cleaning method and a solution for use in a single wafer cleaning process. According to the present invention the cleaning solution comprises ammonium hydroxide (NH4OH), hydrogen peroxide (H2O2), water (H2O) and a chelating agent. In an embodiment of the present invention the cleaning solution also contains a surfactant. And still yet another embodiment of the present invention the cleaning solution also comprises a dissolved gas such as H2. In a particular embodiment of the present invention, this solution is used by spraying or dispensing it on a spinning wafer.
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Citations
22 Claims
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1. A cleaning solution formed from a mixture comprising:
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NH4OH; H2O2; H2O; a chelating agent selected from the group consisting of N,N′
-Bis(2-hydroxyphenyl)ethylenediiminodiacetic acid (HPED) and molybdic acid; anda surfactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A cleaning solution comprising:
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NH4OH; and N,N′
-Bis(2-hydroxyphenyl)ethylenediiminodiacetic acid (HPED). - View Dependent Claims (16, 17, 18)
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19. A cleaning solution comprising:
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H2O2; NH4OH; and molybdic acid. - View Dependent Claims (20, 21, 22)
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Specification