Electronic device and method of manufacturing the same

• US 7,482,648 B2
• Filed: 12/30/2004
• Issued: 01/27/2009
• Est. Priority Date: 12/30/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Young-soo, Yoo, In-kyeong, Noguchi, Takashi, Xianyu, Wenxu
• Primary Examiner(s): Loke; Steven
• Assistant Examiner(s): NGUYEN, NIKI HOANG
• Application Number:
  US11/024,469
• Publication Number:
  US 20050139882A1
• Time in Patent Office: 1,489 Days
• Field of Search: 257/295, 257/296, 257/E27.104, 257/E29.164, 257/E29.272, 257/E21.208, 257/E21.436, 257/E21.663, 257/E21.664, 365/63, 365/65, 365/109, 365/117, 365/49.13, 438 3- 5
• US Class Current: 257/295
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H10B 53/00 Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
• CPC Class Codes: H10B 53/30 characterised by the memory core region

Abstract

In an electronic device, and a method of manufacturing the same, the electronic device includes a first substrate, a first lower capacitor on the first substrate, a first lower switching element on the first lower capacitor, and a second substrate on the first lower switching element. The electronic device may further include a second lower switching element which is isolated from the first lower capacitor, and an upper capacitor on the second substrate, the lower electrode of the upper capacitor being connected to the second lower switching element.

Claims

1. A ferroelectric random access memory (FRAM), comprising:

a lower PRAM including

a first substrate;

a first lower capacitor on the first substrate;

a first lower switching element on the first lower capacitor;

a second substrate on the first lower switching element;

a first bit line on the second substrate of the lower FRAM, the first bit line being connected to the first lower switching element of the lower FRAM; and

an upper FRAM on the second substrate of the lower FRAM, the upper FRAM including a first upper capacitor having a lower electrode spaced apart from the first bit line and a first upper switching element on the first upper capacitor.

2. The FRAM as claimed in claim 1, wherein the first lower capacitor comprises a first electrode, a ferroelectric layer and a second electrode, which are sequentially stacked on the first substrate, the second electrode being perpendicular to the first electrode.

3. The FRAM as claimed in claim 1, wherein the first lower switching element is a thin film transistor.

4. The FRAM as claimed in claim 1, further comprising a metal line between the first lower capacitor and the first lower switching element, the metal line bonding the first lower capacitor to the first lower switching element.

5. The FRAM as claimed in claim 4, wherein the metal line and the first lower switching element are connected to each other through a conductive plug.

6. The FRAM as claimed in claim 4, further comprising a solder bump between the metal line and the first lower capacitor.

7. The FRAM as claimed in claim 1, further comprising an interlayer insulating layer, the first lower switching element being provided inside the interlayer insulating layer, and a bonding pad on each of the interlayer insulating layer and the first lower capacitor.

8. The FRAM as claimed in claim 1, further comprising a second lower switching element between the first substrate and the second substrate.

9. The FRAM as claimed in claim 8, wherein the first lower capacitor is expanded between the first substrate and the second lower switching element, the first lower capacitor being isolated from the second lower switching element.

10. The FRAM as claimed in claim 8, wherein the first lower switching element is identical to the second lower switching element.

11. The FRAM as claimed in claim 1, wherein the first upper capacitor is identical to the first lower capacitor.

12. The FRAM as claimed in claim 1, wherein the first upper switching element is identical to the first lower switching element.

13. The FRAM as claimed in claim 1, wherein the lower electrode of the first upper capacitor is provided on the second substrate and extends over the second substrate along a same plane along which the first bit line extends, the plane being substantially parallel with a plane along which the second substrate extends.

14. The FRAM as claimed in claim 1, further comprising an interlayer insulating layer between the lower electrode of the first upper capacitor and the second substrate, the interlayer insulating layer covering the first bit line.

15. The FRAM as claimed in claim 1, further comprising a metal line between the first upper capacitor and the first upper switching element, the metal line bonding the first upper capacitor to the first upper switching element.

16. The FRAM as claimed in claim 15, further comprising a conductive plug connecting the metal line and the first upper switching element.

17. The FRAM as claimed in claim 1, wherein the first upper switching element is formed inside an interlayer insulating layer, and each of the interlayer insulating layer and the first upper capacitor includes a bonding pad.

18. The FRAM as claimed in claim 1, further comprising a third substrate on the first upper switching element.

19. The FRAM as claimed in claim 18, further comprising a second bit line on the third substrate, the second bit line being connected to the first upper switching element.

20. A ferroelectric random access memory (FRAM), comprising:

a first substrate;

a first lower capacitor on the first substrate;

a first lower switching element on the first lower capacitor;

a second substrate on the first lower switching element;

a second lower switching element between the first substrate and the second substrate;

a first bit line on the second substrate, the first bit line being connected to the first lower switching element; and

an upper capacitor on the second substrate, the upper capacitor including a lower electrode that is isolated from the first bit line and is connected to the second lower switching element and the second substrate being disposed between the upper capacitor and the first lower capacitor.

21. The FRAM as claimed in claim 20, wherein the first bit line is further connected to the second lower switching element.

22. The FRAM as claimed in claim 20, wherein the lower electrode of the upper capacitor is provided on the second substrate and extends over the second substrate along a same plane along which the first bit line extends, the plane being substantially parallel with a plane along which the second substrate extends.

23. The FRAM as claimed in claim 20, wherein an area in which the first and second lower switching elements are connected to the first bit line has an expanded portion, and the first bit line passes over the expanded portion.

24. The FRAM as claimed in claim 20, wherein an area in which the second lower switching element is connected to the upper capacitor has an expanded portion, and the lower electrode passes over the expanded portion.

25. The FRAM as claimed in claim 20, further comprising a protrusion in the first bit line, wherein the first bit line is connected to the first and second lower switching elements through the protrusion.

26. The FRAM as claimed in claim 20, further comprising a protrusion in the lower electrode of the upper capacitor, wherein the lower electrode of the upper capacitor is connected to the second lower switching element through the protrusion.

27. The FRAM as claimed in claim 20, wherein the first bit line passes over the first and second lower switching elements and detours around a region in which the lower electrode of the upper capacitor and the second lower switching element are connected to each other.

28. The FRAM as claimed in claim 20, further comprising an interlayer insulating layer between the lower electrode of the upper capacitor and the second substrate, the interlayer insulating layer covering the first bit line.

29. The FRAM as claimed in claim 28, wherein the lower electrode of the upper capacitor is parallel to the first bit line and passes over the first bit line.

30. The FRAM as claimed in claim 20, further comprising an upper FRAM on the upper capacitor, the upper FRAM being isolated from the upper capacitor.

31. The FRAM as claimed in claim 30, wherein the upper FRAM comprises:

a first capacitor; and

a first switching element stacked on the first capacitor.

32. The FRAM as claimed in claim 30, further comprising a third substrate on the first switching element.

33. The FRAM as claimed in claim 32, further comprising:

a second switching element between the third substrate and the first capacitor, the second switching being isolated from the first capacitor;

a second bit line on the third substrate and connected to the first and second switching elements; and

a second capacitor on the third substrate and connected to the second switching element, the second capacitor being isolated from the second bit line.

34. A method of manufacturing a ferroelectric random access memory (FRAM), comprising:

(a) forming a first capacitor on a first surface of a first substrate;

(b) forming a first switching element on a first surface of a second substrate;

(c) bonding the first capacitor to the first switching element;

(d) forming a first bit line on a second surface of the second substrate, the first bit line being connected to the first switching element; and

(e) forming an FRAM layer on the second surface of the second substrate such that the second substrate is between the first capacitor and the FRAM layer, the FRAM layer including an upper capacitor having a lower electrode spaced apart from the first bit line and an upper switching element on the upper capacitor.

35. The method as claimed in claim 34, wherein forming the first capacitor comprises:

forming a first electrode on the first surface of the first substrate;

forming a ferroelectric layer on the first electrode; and

forming a second electrode on the ferroelectric layer, the second electrode being crossed with the first electrode.

36. The method as claimed in claim 35, further comprising forming a first bonding pad and a first alignment key on the ferroelectric layer.

37. The method as claimed in claim 34, further comprising, between forming the first switching element and the bonding of the first capacitor to the first switching element:

forming an interlayer insulating layer on the first surface of the second substrate, the interlayer insulating layer covering the first switching element;

forming a via hole in the interlayer insulating layer, the via hole exposing the first switching element;

filling the via hole with a conductive plug; and

forming a metal line on the interlayer insulating layer, the metal line being connected to the conductive plug.

38. The method as claimed in claim 37, wherein forming the via hole comprises forming a second bonding pad and a second alignment key.

39. The method as claimed in claim 34, wherein bonding the first capacitor to the first switching element comprises:

clamping a second surface of the first substrate, the second surface of the first substrate facing the first surface thereof;

clamping a second surface of the second substrate, the second surface of the second substrate facing the first surface thereof;

aligning the first and second substrates to dispose the first capacitor and the first switching element at a bonding position;

pressurizing and contacting the first capacitor and the first switching element;

heating the pressurized and contacted portion of the first capacitor and the first switching element; and

releasing the second surfaces of the first and second substrates.

40. The method as claimed in claim 39, further comprising annealing the pressurized and contacted resultant structure in an ultra high vacuum state, thereby heating the pressurized and contacted portion of the first capacitor and the first switching element.

41. The method as claimed in claim 39, further comprising irradiating the contacted portion of the first capacitor and the first switching element, thereby heating the contacted portion of the first capacitor and the first switching element.

42. The method as claimed in claim 41, further comprising providing a mask between a light source used for irradiating and the second surface of the second substrate, the mask including a light transmitting area, which corresponds to the contacted portion, and a light shielding area which corresponds to other areas.

43. The method as claimed in claim 34, wherein forming the FRAM layer on the second surface of the second substrate comprises forming the FRAM layer to be isolated from the bit line.

44. The method as claimed in claim 43, wherein forming the FRAM layer comprises:

forming the upper capacitor on the second face of the second substrate isolated from the bit line; and

forming the upper switching element on the upper capacitor.

45. The method as claimed in claim 44, further comprising an interlayer insulating layer between the upper capacitor and the second surface of the second substrate, the interlayer insulating layer covering the bit line.

46. The method as claimed in claim 44, forming a lower electrode of the upper capacitor on the second surface of the second substrate, the lower electrode being isolated from the bit line.

47. The method as claimed in claim 39, further comprising, after the releasing, thinning at least one of the first substrate and the second substrate.

48. The method as claimed in claim 34, wherein bonding the first capacitor and the first switching element comprises using a solder bump.

49. A method of manufacturing a ferroelectric random access memory (FRAM), comprising:

(a) forming a first capacitor on a first surface of a first substrate;

(b) forming a first switching element on a first surface of a second substrate;

(c) bonding the first capacitor to the first switching element;

(d) forming a second switching element between the first substrate and the second

(e) forming a first bit line on a second surface of the second substrate, the first bit line being connected to the first switching element; and

(f) forming an upper capacitor on the second surface of the second substrate such that the second substrate is between the upper capacitor and the first capacitor, the upper capacitor including a lower electrode that is isolated from the bit line and is connected to the second switching element.

50. The method as claimed in claim 49, further comprising forming the second switching element on the first surface of the second substrate.

51. The method as claimed in claim 49, further comprising forming the first bit line being connected to the second switching elements.

52. The method as claimed in claim 51, further comprising forming an interlayer insulating layer between the upper capacitor and the second surface of the second substrate, the interlayer insulating layer covering the bit line.

53. The method as claimed in claim 51, further comprising:

forming an interlayer insulating layer on the upper capacitor; and

forming an FRAM layer on the interlayer insulating layer.

54. The method as claimed in claim 53, wherein forming the FRAM layer comprises:

forming a capacitor on the interlayer insulating layer;

forming a switching element on a first surface of a third substrate; and

bonding the switching element to the capacitor.

55. The method as claimed in claim 53, wherein forming the FRAM layer comprises:

forming a lower capacitor on the interlayer insulating layer;

forming a first switching element to be connected to the lower capacitor and a second switching element to be isolated from the lower capacitor on a first surface of a third substrate;

bonding the first switching element to the lower capacitor;

forming a second bit line on a second surface of the third substrate, the second surface of the third substrate facing the first surface thereof, the second bit line being connected to the first and second switching elements; and

forming a second upper capacitor on the second surface of the third substrate, the second upper capacitor being connected to the second switching element, a lower electrode of the second upper capacitor being isolated from the second bit line.

56. The method as claimed in claim 55, wherein bonding the first switching element to the lower capacitor comprises contacting a metal line connected to the first switching element through a conductive plug to the lower capacitor.