Process for manufacturing microelectronic, microoptoelectronic or micromechanical devices
First Claim
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1. A process for manufacturing a device for use in the production of a microdevice including the steps of:
- creating a support device by deposing discrete deposits of contaminant removing material on a base layer of a material selected from the group consisting of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials;
covering said contaminant removing material by a manufacturing layer, wherein said manufacturing layer is a substrate layer which may be used in the manufacture of said microdevice;
removing selected materials in said manufacturing layer creating a passage in said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create; and
attaching said support device such that it covers operational parts of said microdevice and a seal is created at the periphery of said cavity by said support device and said microdevice, whereby said operational parts are placed in said cavity from removed layer of manufacturing material.
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Abstract
The specification teaches a technique for manufacturing microelectronic, microoptoelectronic or micromechanical devices (microdevices) in which a contaminant absorption layer improves the life and operation of the microdevice. In an embodiment, a process for manufacturing the devices includes efficiently integrating a getter material.
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Citations
29 Claims
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1. A process for manufacturing a device for use in the production of a microdevice including the steps of:
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creating a support device by deposing discrete deposits of contaminant removing material on a base layer of a material selected from the group consisting of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials; covering said contaminant removing material by a manufacturing layer, wherein said manufacturing layer is a substrate layer which may be used in the manufacture of said microdevice; removing selected materials in said manufacturing layer creating a passage in said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create; and attaching said support device such that it covers operational parts of said microdevice and a seal is created at the periphery of said cavity by said support device and said microdevice, whereby said operational parts are placed in said cavity from removed layer of manufacturing material. - View Dependent Claims (2)
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3. A process comprising:
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creating a support device by deposing discrete deposits of contaminant removing material at a thickness of between about 0.1 to 5 μ
m on a base layer of a material selected from the group consisting of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials;covering said contaminant removing material by a manufacturing layer, wherein said manufacturing layer is a substrate layer which may be used in the manufacture of a microdevice; removing selected portions of said manufacturing layer creating a passage in said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create cavities. - View Dependent Claims (4, 5, 6, 7)
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8. A method for providing multiple microdevices comprising:
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forming a first base, including a plurality of microdevice bases, where each microdevice base is provided with at least one component; forming a second base, including a plurality of covers, where each cover is provided with a recess holding getter material; juxtaposing the first base and the second base to form a compound structure; separating the microdevices from the compound structure. - View Dependent Claims (9, 10, 11, 12)
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13. A method comprising:
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forming a base, including a plurality of covers, where each cover is provided with a recess holding getter material; forming on the base a production process-compatible layer of a material compatible with the production of microelectronic or micromechanical devices or parts thereof; providing the base in a production process in which passages are formed in the production process-compatible layer. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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20. A process comprising:
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creating a support device by deposing discrete deposits of contaminant removing material on a base layer of a material selected from the group consisting of glasses, ceramics, semiconductors and metals, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials; covering said contaminant removing material by a manufacturing layer to a thickness of between about 1 to 20 μ
m, wherein said manufacturing layer is a substrate layer which may be used in the manufacture of said microdevice; andremoving selected portions of said manufacturing layer creating a passage in said manufacturing layer, such that said contaminant removing material is exposed to atmosphere, wherein said passages create cavities. - View Dependent Claims (21, 22, 23)
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24. A method for providing multiple microdevices comprising:
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forming a first base, including a plurality of microdevice bases, where each microdevice base is provided with at least one microdevice component; forming a second base, including a plurality of covers, where each cover is provided with a recess; depositing contaminant removing material into each recess of each cover, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials; juxtaposing the first base and the second base to form a compound structure; and separating the microdevices from the compound structure.
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25. A method for providing multiple microdevices comprising:
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forming a first base, including a plurality of microdevice bases, where each microdevice is provided with at least one microdevice component; forming a second base, including a plurality of covers, where each cover is provided with a recess; depositing contaminant removing material in a thickness of between about 0.1 to 5 μ
m into each recess of each cover, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials;juxtaposing the first base and the second base to form a compound structure; and separating the microdevices from the compound structure.
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26. A method for providing multiple microdevices comprising:
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forming a first wafer, including a plurality of microdevice bases, where each microdevice is provided with at least one microdevice component; forming a second wafer, including a plurality of covers, where each cover is provided with a recess; depositing contaminant removing material into each recess of each cover, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials; fixing together the first wafer and the second wafer to form a compound structure; and separating the microdevices from the compound structure.
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27. A method of providing multiple microdevices comprising:
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forming a first wafer, including a plurality of microdevice bases, where each microdevice base is provided with at least one microdevice component; forming a second wafer, including a plurality of covers, where each cover is provided with a recess; depositing contaminant removing material in a thickness of between about 0.1 to 5 μ
m into each recess of each cover, wherein said contaminant removing material is selected among the group of materials consisitng of getter materials and drier materials;fixing together the first wafer and the second wafer to form a compound structure; and separating the microdevices from the compound structure.
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28. A method for providing multiple microdevices comprising:
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forming a first wafer, including a plurality of microdevice bases, where each microdevice base is provided with at least one microdevice component; forming a second wafer, including a plurality of covers, where each cover is provided with a recess; depositing contaminant removing material into each recess of each cover through the use of selective deposition, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials; fixing together the first wafer and the second wafer to form a compound structure; and separating the microdevices from the compound structure.
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29. A method for providing multiple microdevices comprising:
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forming a first wafer, including a plurality of microdevice bases, where each microdevice base is provided with at least one microdevice component; forming a second wafer, including a plurality of covers, where each cover is provided with a recess; depositing contaminant removing material into each recess of each cover through the use of sputtering, wherein said contaminant removing material is selected among the group of materials consisting of getter materials and drier materials; and fixing together the first wafer and the second wafer to form a compound structure; separating the microdevices from the compound structure.
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Specification