Semiconductor device and method for fabricating the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a porous low-dielectric-constant film formed on a substrate and having an opening; and
a fine particle film composed of a plurality of aggregately deposited fine particles formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening, wherein;
the fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening, anda size of each of the fine particles is equal to a size of each of the voids.
0 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm and formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening. The fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening.
-
Citations
7 Claims
-
1. A semiconductor device comprising:
-
a porous low-dielectric-constant film formed on a substrate and having an opening; and a fine particle film composed of a plurality of aggregately deposited fine particles formed on a surface of the portion of the porous low-dielectric-constant film which is formed with the opening, wherein; the fine particles are filled in voids exposed at the surface of the portion of the porous low-dielectric-constant film which is formed with the opening, and a size of each of the fine particles is equal to a size of each of the voids. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification