High efficiency light emitting diode (LED) with optimized photonic crystal extractor

• US 7,582,910 B2
• Filed: 02/28/2005
• Issued: 09/01/2009
• Est. Priority Date: 02/28/2005
• Status: Expired due to Fees

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: DenBaars, Steven P., David, Aurelien J. F., Weisbuch, Claude C. A.
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US11/067,956
• Publication Number:
  US 20060192217A1
• Time in Patent Office: 1,646 Days
• Field of Search: 257/79, 257/86, 257/87, 257 94- 99, 257/103
• US Class Current: 257/86
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A high efficiency, and possibly highly directional, light emitting diode (LED) with an optimized photonic crystal extractor. The LED is comprised of a substrate, a buffer layer grown on the substrate (if needed), an active layer including emitting species, one or more optical confinement layers that tailor the structure of the guided modes in the LED, and one or more diffraction gratings, wherein the diffraction gratings are two-dimensional photonic crystal extractors. The substrate may be removed and metal layers may be deposited on the buffer layer, photonic crystal and active layer, wherein the metal layers may function as a mirror, an electrical contact, and/or an efficient diffraction grating.

Claims

1. A light emitting diode (LED), comprising:

(a) a substrate;

(b) an active layer formed on the substrate, wherein the active layer includes one or more light emitting species;

(c) one or more optical confinement layers formed under or around the active layer; and

(d) one or more diffraction gratings formed on the LED, wherein the diffraction gratings are two-dimensional photonic crystals that direct emissions outside the LED;

(e) wherein the optical confinement layers are formed to tailor a structure of guided modes within the LED to enhance light extraction by the photonic crystals, by exciting the guided modes localized above the optical confinement layers for extraction by the photonic crystals, and the photonic crystals convert the guided modes into extracted light from the LED.

2. The LED of claim 1, further comprising a buffer layer formed on the substrate, wherein the active layer is formed on the buffer layer.

3. The LED of claim 1, further comprising one or more layers deposited on one or both sides of the LED, wherein the layers function as a mirror, electrical contact, or diffraction grating.

4. The LED of claim 1, wherein light is primarily emitted into modes that interact with the photonic crystals, so that guided modes that are usually lost are diffracted outside the LED.

5. The LED of claim 1, wherein the photonic crystals cross the light emitting species in the active layer.

6. The LED of claim 1, wherein the photonic crystals are situated within one or a few optical lengths from the light emitting species in the active layer.

7. The LED of claim 1, wherein the LED retains a planar single layer structure.

8. The LED of claim 1, wherein the photonic crystals include a taper comprised of variable hole lines.

9. The LED of claim 8, wherein the taper comprises one or more periods of modified holes, and the modified holes have a variable hole depth, variable hole period, or variable hole diameter.

10. The LED of claim 1, wherein characteristics of the photonic crystals are varied along its structure, so as to modify properties of the photonic crystals.

11. The LED of claim 1, wherein a light generation region coincides or overlaps with the photonic crystals, so that guided light does not suffer from reflection or scattering at an interface to the photonic crystals region.

12. The LED of claim 1, wherein a position of the light emitting species is finely tuned, so as to precisely control its emission properties.

13. The LED of claim 1, wherein, by suitable tailoring of a guided modes structure, light diffraction by the photonic crystals occurs in a given range of directions, thereby forming a highly directional light source.

14. A light emitting diode (LED) device, comprising a substrate;

an active layer formed on the substrate, wherein the active layer includes one or more light emitting species;

one or more optical confinement layers formed under or around the active layer; and

one or more diffraction gratings formed on the LED, wherein the diffraction gratings are two-dimensional photonic crystals that direct emissions outside the LED;

wherein the optical confinement layers are formed to tailor a structure of guided modes within the LED to enhance light extraction by the photonic crystals, by exciting the guided modes localized above the optical confinement layers for extraction by the photonic crystals, and the photonic crystals convert the guided modes into extracted light from the LED; and

wherein the LED device is fabricated according to the following method;

(a) forming the active layer on a substrate;

(b) forming the optical confinement layers under or around the active layer; and

(c) forming the diffraction gratings on LED.