Semiconductor device with trench transistors and method for manufacturing such a device

• US 7,601,596 B2
• Filed: 11/16/2006
• Issued: 10/13/2009
• Est. Priority Date: 11/16/2006
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Hirler, Franz, Zundel, Markus, Zelsacher, Rudolf, Bacher, Erwin
• Primary Examiner(s): Richards; N Drew
• Assistant Examiner(s): Lee; Kyoung
• Application Number:
  US11/600,422
• Publication Number:
  US 20080116511A1
• Time in Patent Office: 1,062 Days
• Field of Search: None
• US Class Current: 438/268
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

According to one embodiment, a method for manufacturing a semiconductor device includes forming trenches in a first side of a semiconductor material and forming a thick oxide layer on the trenches and on the first side. A part of the first side and the trenches is masked using a first mask, and the semiconductor material is doped by implantation through the thick oxide layer while the first mask is present. At least part of the thick oxide layer is removed while the first mask remains.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming trenches in a first side of a semiconductor material;

forming a thick oxide layer on the trenches and on the first side;

masking a part of the first side and the trenches using a first mask and leaving another part of the first side and a part of at least one of the trenches unmasked;

doping the semiconductor material by implantation through the thick oxide layer while the first mask is present; and

removing at least part of the thick oxide layer while the first mask remains.

2. A method for manufacturing a semiconductor device comprising:

forming trenches in a first side of a semiconductor material;

forming a thick oxide layer on the trenches and on the first side;

masking a part of the first side and the trenches using a first mask;

doping the semiconductor material by implantation through the thick oxide layer while the first mask is present;

removing at least part of the thick oxide layer while the first mask remains; and

forming a thin oxide layer on the first side after the removing step.

3. The method as recited in claim 2 further comprising removing the first mask after the removing step and before the forming of the thin oxide layer step.

4. The method as recited in claim 2 wherein the forming of the thin oxide layer is a thermal treatment, the thermal treatment also expanding a section of the semiconductor material doped by the implantation.

5. A method for manufacturing a semiconductor device comprising:

forming trenches in a first side of a semiconductor material;

forming a thick oxide layer on the trenches and on the first side;

masking a part of the first side and the trenches using a first mask;

doping the semiconductor material by implantation through the thick oxide layer while the first mask is present; and

removing at least part of the thick oxide layer while the first mask remains, the removing step including etching, a part of the thick oxide layer remaining underneath the first mask, the part of the thick oxide layer etched also being in the trenches.

6. A method for manufacturing a semiconductor device comprising:

forming trenches in a first side of a semiconductor material;

forming a thick oxide layer on the trenches and on the first side;

masking a part of the first side and the trenches using a first mask;

doping the semiconductor material by implantation through the thick oxide layer while the first mask is present;

removing at least part of the thick oxide layer while the first mask remains; and

adding a conductive material into the trenches after the forming of the thick oxide layer and prior to the doping step, the conductive material being distinct from the first mask.

7. The method as recited in claim 6 wherein the conductive material is doped polysilicon.

8. A method for manufacturing a semiconductor device comprising:

forming trenches in a first side of a semiconductor material, the trenches having a bottom;

forming a thick oxide layer on the first side of the semiconductor material and on the trenches;

removing at least a part of the thick oxide layer from the first side of the semiconductor material and the trenches;

doping the semiconductor material by implantation to form a body region before or after the removing step; and

thermally treating the semiconductor material after the doping to both form a thin oxide layer over the body and in at least part of the trenches and to extend the body region.