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Semiconductor device, electronic device, and method of manufacturing semiconductor device

  • US 7,635,889 B2
  • Filed: 01/17/2006
  • Issued: 12/22/2009
  • Est. Priority Date: 01/28/2005
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a source electrode layer having a plurality of widths and curving in at least one portion, anda drain electrode layer having a plurality of widths and curving in at least one portion,wherein the source electrode layer is symmetrical along a centerline of the source electrode layer,wherein the drain electrode layer is symmetrical along a centerline of the drain electrode layer, andwherein side surfaces of the source electrode layer and the drain electrode layer provided adjacent to each other have curvatures in a same direction.

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