Semiconductor device, electronic device, and method of manufacturing semiconductor device

• US 7,635,889 B2
• Filed: 01/17/2006
• Issued: 12/22/2009
• Est. Priority Date: 01/28/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kawamata, Ikuko, Fujii, Gen, Isa, Toshiyuki, Morisue, Masafumi
• Primary Examiner(s): Lee; Eugene
• Application Number:
  US11/333,701
• Publication Number:
  US 20060170111A1
• Time in Patent Office: 1,435 Days
• Field of Search: 257/347, 257/4, 257/249, 257/309, 257/E29.12
• US Class Current: 257/309
• CPC Class Codes: H01L 21/02672 using crystallisation enhancing elements
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 71/236 using printing techniques, e.g. applying the etch liquid using an ink jet printer
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing
• CPC Class Codes: H10K 71/621 Providing a shape to conductive layers, e.g. patterning or selective deposition
• CPC Class Codes: Y02P 80/30 Reducing waste in manufacturing processes; Calculations of released waste quantities

Abstract

Conductive layers having knots are adjacently formed with uniform distance therebetween. Droplets of the conductive layers are discharged to stagger centers of the droplets in a length direction of wirings so that the centers of the discharged droplets are not on the same line in a line width direction between the adjacent conductive layers. Since the centers of the droplets are staggered, parts of the conductive layers each having a widest line width (the widest width of knot) are not connected to each other, and the conductive layers can be formed adjacently with a shorter distance therebetween.

Claims

1. A semiconductor device comprising:

a source electrode layer having a plurality of widths and curving in at least one portion, and

a drain electrode layer having a plurality of widths and curving in at least one portion,

wherein the source electrode layer is symmetrical along a centerline of the source electrode layer,

wherein the drain electrode layer is symmetrical along a centerline of the drain electrode layer, and

wherein side surfaces of the source electrode layer and the drain electrode layer provided adjacent to each other have curvatures in a same direction.

2. An semiconductor device according to claim 1, wherein the semiconductor device is incorporated into a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

3. A semiconductor device according to claim 1, wherein a distance between the source electrode layer and the drain electrode layer is uniform.

4. A semiconductor device comprising:

a source electrode layer in which width is continuously varied, and

a drain electrode layer in which width is continuously varied,

wherein side portions of the source electrode layer and the drain electrode layer each have a continuous wave shape, and

wherein side surfaces of the source electrode layer and the drain electrode layer provided adjacent to each other have curvatures in a same direction.

5. An semiconductor device according to claim 4, wherein the semiconductor device is incorporated into a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

6. A semiconductor device according to claim 4, wherein a distance between the source electrode layer and the drain electrode layer is uniform.

7. A semiconductor device comprising:

a source electrode layer in which width is continuously varied, and

a drain electrode layer in which width is continuously varied,

wherein side portions of the source electrode layer and the drain electrode layer each have a continuous wave shape,

wherein portions of the source electrode layer having widest widths are aligned with portions of the drain electrode layer having narrowest widths in a width direction of the source electrode layer and the drain electrode layer, and

wherein side surfaces of the source electrode layer and the drain electrode layer provided adjacent to each other have curvatures in a same direction.

8. A semiconductor device according to claim 7 wherein portions of the source electrode layer having narrowest widths are aligned with portions of the drain electrode layer having widest widths in a width direction of the source electrode layer and the drain electrode layer.

9. An semiconductor device according to claim 7, wherein the semiconductor device is incorporated into a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

10. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer;

a semiconductor layer;

a source electrode layer; and

a drain electrode layer,

wherein the source and the drain electrode layers have a plurality of widths and curve in at least one portion,

wherein the source electrode layer is symmetrical along a centerline,

wherein the drain electrode layer is symmetrical along a centerline, and

wherein side surfaces of the source and drain electrode layers provided adjacent to each other have curvatures in a same direction.

11. An semiconductor device according to claim 10, wherein the semiconductor device is incorporated into a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

12. A semiconductor device according to claim 10, wherein a distance between the source and the drain electrode layers is uniform.

13. A semiconductor device comprising:

a gate electrode layer;

a gate insulating layer;

a semiconductor layer;

a source electrode layer; and

a drain electrode layer,

wherein widths of the source and the drain electrode layers are continuously varied, and

wherein side surfaces of the source and drain electrode layers provided adjacent to each other have curvatures in a same direction.

14. An semiconductor device according to claim 13, wherein the semiconductor device is incorporated into a display device, a video camera, a digital camera, a personal computer, or a portable information terminal.

15. A semiconductor device according to claim 13, wherein a distance between the source and the drain electrode layers is uniform.