Method of making a semiconductor device having a multicomponent oxide

• US 7,732,251 B2
• Filed: 10/11/2007
• Issued: 06/08/2010
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Herman, Gregory S., Mardilovich, Peter P., Hoffman, Randy L.
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US11/870,618
• Publication Number:
  US 20080254569A1
• Time in Patent Office: 971 Days
• Field of Search: 438/85, 438/104, 438/754, 257/E29.1, 257/E29.117
• US Class Current: 438/104
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: Y10T 408/5633 Adapted to coaxially grip round work

Abstract

One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Claims

1. A method of forming a channel, comprising:

providing at least one precursor composition that includes one or more precursor compounds that include;

zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide; and

depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

2. The method of claim 1, wherein the precursor composition includes a liquid form.

3. The method of claim 2, wherein depositing the channel includes an ink-jet deposition technique when the precursor composition includes the liquid form.

4. The method of claim 1, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

5. The method of claim 4, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein D is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

6. The method of claim 1, wherein depositing the channel includes depositing one of an amorphous form, a single-phase crystalline form, and a mixed-phase crystalline form.

7. The method of claim 1, wherein depositing a channel includes vaporizing the precursor composition to form a vaporized precursor composition, and depositing the vaporized precursor composition using a physical vapor deposition technique including one or more of dc reactive sputtering, rf sputtering, magnetron sputtering, ion beam sputtering.

8. The method of claim 1, including providing a substrate or substrate assembly;

and

forming the semiconductor device on the substrate or substrate assembly.

9. A method of manufacturing a semiconductor device, comprising the steps of:

providing a drain electrode;

providing a source electrode;

providing at least one precursor composition that includes one or more precursor compounds of zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;

depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel.

10. The method of claim 9, wherein providing the source, the drain, and the gate electrodes includes providing a substantially transparent form of the source, the drain, and the gate electrodes.

11. The method of claim 9, wherein depositing a channel includes an ink-jet deposition technique.

12. The method of claim 9, including providing a substrate or substrate assembly;

and

forming the semiconductor device on the substrate or substrate assembly.

13. The method of claim 9, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

14. The method of claim 13, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein D is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

15. A method of manufacturing a semiconductor device, comprising the steps of:

providing a drain electrode;

providing a source electrode;

providing at least one precursor composition that includes one or more precursor compounds of zinc oxide, cadmium oxide, gallium oxide, indium oxide, zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide;

depositing a channel including depositing the precursor composition to form a multicomponent oxide from the precursor composition contacting the drain electrode and the source electrode;

providing a gate electrode; and

providing a gate dielectric positioned between the gate electrode and the channel, wherein the precursor composition includes one or more precursor compounds that include A_x, one or more precursor compounds that include B_x, and one or more precursor compounds that include C_x, wherein each A is selected from the group of Zn, Cd, each B is selected from the group Ga, In, each C is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, and C are different.

16. The method of claim 15, wherein the one or more precursor compounds includes one or more precursor compounds that include D_x, wherein D is selected from the group of Zn, Cd, Ga, In, each x is independently a non-zero integer, and wherein each of A, B, C, and D are different.

17. The method of claim 15, wherein depositing a channel includes an ink-jet deposition technique.

18. The method of claim 15, including providing a substrate or substrate assembly;

and

forming the semiconductor device on the substrate or substrate assembly.