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Method of making a semiconductor device having a multicomponent oxide

  • US 7,732,251 B2
  • Filed: 10/11/2007
  • Issued: 06/08/2010
  • Est. Priority Date: 03/12/2004
  • Status: Active Grant
First Claim
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1. A method of forming a channel, comprising:

  • providing at least one precursor composition that includes one or more precursor compounds that include;

    zinc-gallium oxide, cadmium-gallium oxide, and cadmium-indium oxide; and

    depositing the channel including the precursor composition to form a multicomponent oxide from the precursor composition to electrically couple a drain electrode and a source electrode.

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