Manufacturing method of semiconductor device with a barrier layer and a metal layer
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate comprising a pad electrode layer comprising a first barrier metal layer formed on a top surface of the semiconductor substrate and a metal layer formed on the first barrier metal layer;
attaching a supporting member to the top surface of the semiconductor substrate;
forming a via hole in the semiconductor substrate from a back surface of the semiconductor substrate to expose the first barrier metal layer; and
forming a metal wiring layer on the back surface of the semiconductor substrate so that the metal wiring layer extends into the via hole to connect with the first barrier metal layer.
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Abstract
This invention provides a semiconductor device and a manufacturing method thereof which can minimize deterioration of electric characteristics of the semiconductor device without increasing an etching process. In the semiconductor device of the invention, a pad electrode layer formed of a first barrier layer and an aluminum layer laminated thereon is formed on a top surface of a semiconductor substrate. A supporting substrate is further attached on the top surface of the semiconductor substrate. A second barrier layer is formed on a back surface of the semiconductor substrate and in a via hole formed from the back surface of the semiconductor substrate to the first barrier layer. Furthermore, a re-distribution layer is formed in the via hole so as to completely fill the via hole or so as not to completely fill the via hole. A ball-shaped terminal is formed on the re-distribution layer.
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Citations
14 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate comprising a pad electrode layer comprising a first barrier metal layer formed on a top surface of the semiconductor substrate and a metal layer formed on the first barrier metal layer; attaching a supporting member to the top surface of the semiconductor substrate; forming a via hole in the semiconductor substrate from a back surface of the semiconductor substrate to expose the first barrier metal layer; and forming a metal wiring layer on the back surface of the semiconductor substrate so that the metal wiring layer extends into the via hole to connect with the first barrier metal layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate comprising a pad electrode layer comprising a first barrier metal layer formed on a top surface of the semiconductor substrate and a metal layer formed on the first barrier metal layer; forming a via hole in the semiconductor substrate from a back surface of the semiconductor substrate to expose the first barrier metal layer; and forming a metal wiring layer on the back surface of the semiconductor substrate so that the metal wiring layer extends into the via hole to connect with the first barrier metal layer. - View Dependent Claims (13, 14)
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Specification