Semiconductor device and method of forming an interposer package with through silicon vias
First Claim
1. A method of making a semiconductor device, comprising:
- providing a carrier for supporting the semiconductor device;
mounting a first semiconductor die to the carrier, the first semiconductor die having a contact pad;
mounting a first dummy die to the carrier, the first dummy die having a through-silicon via (TSV);
encapsulating the first semiconductor die and the first dummy die using a wafer molding material;
forming a first interconnect structure over the first semiconductor die and the first dummy die, the first interconnect structure being connected to the contact pad of the first semiconductor die and the TSV of the first dummy die;
removing the carrier;
forming a second interconnect structure over the first semiconductor die and the first dummy die, the second interconnect structure being connected to the TSV of the first dummy die; and
connecting a semiconductor package to the second interconnect structure.
6 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device is fabricated by providing a carrier for supporting the semiconductor device. A first semiconductor die is mounted to the carrier. The first semiconductor die has a contact pad. A first dummy die is mounted to the carrier. The first dummy die has a through-silicon via (TSV). The first semiconductor die and the first dummy die are encapsulated using a wafer molding material. A first interconnect structure is formed over the first semiconductor die and the first dummy die. The first interconnect structure is connected to the contact pad of the first semiconductor die and the TSV of the first dummy die. The carrier is removed and a second interconnect structure is formed over the first semiconductor die and the first dummy die. The second interconnect structure is connected to the TSV of the first dummy die. A semiconductor package is connected to the second interconnect structure.
-
Citations
20 Claims
-
1. A method of making a semiconductor device, comprising:
-
providing a carrier for supporting the semiconductor device; mounting a first semiconductor die to the carrier, the first semiconductor die having a contact pad; mounting a first dummy die to the carrier, the first dummy die having a through-silicon via (TSV); encapsulating the first semiconductor die and the first dummy die using a wafer molding material; forming a first interconnect structure over the first semiconductor die and the first dummy die, the first interconnect structure being connected to the contact pad of the first semiconductor die and the TSV of the first dummy die; removing the carrier; forming a second interconnect structure over the first semiconductor die and the first dummy die, the second interconnect structure being connected to the TSV of the first dummy die; and connecting a semiconductor package to the second interconnect structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method of making a semiconductor device, comprising:
-
providing a carrier for supporting the semiconductor device; mounting a first semiconductor die to the carrier; mounting a first dummy die to the carrier, the first dummy die having a through-silicon via (TSV); depositing encapsulant over the first semiconductor die and the first dummy die; forming a first interconnect structure over the first semiconductor die and the first dummy die, the first interconnect structure being connected to the first semiconductor die and the TSV of the first dummy die; removing the carrier; and forming a second interconnect structure over the first semiconductor die and the first dummy die, the second interconnect structure being connected to the TSV of the first dummy die. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15)
-
-
16. A method of making a semiconductor device, comprising:
-
providing a carrier for supporting the semiconductor device; mounting a first semiconductor device to the carrier; mounting a second semiconductor device to the carrier, the second semiconductor device having a through-silicon via (TSV); encapsulating the first and second semiconductor devices; forming a first interconnect structure over the first semiconductor die and the first dummy die, the first interconnect structure being connected to the first semiconductor device and the TSV of the second semiconductor device; and forming a second interconnect structure over the first and second semiconductor devices, the second interconnect structure being connected to the TSV of the second semiconductor device. - View Dependent Claims (17, 18, 19, 20)
-
Specification