Semiconductor device having a semiconductor chip enclosed by a body structure and a base

• US 7,838,976 B2
• Filed: 07/25/2007
• Issued: 11/23/2010
• Est. Priority Date: 07/28/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Arai, Yasuyuki, Yamazaki, Shunpei
• Primary Examiner(s): Richards; N Drew
• Assistant Examiner(s): Jung; Michael
• Application Number:
  US11/878,510
• Publication Number:
  US 20080023810A1
• Time in Patent Office: 1,217 Days
• Field of Search: 257/700, 257/528, 257/508, 257/678, 257/684, 343/895, 340/572, 296/00, 296/01, 29825-884
• US Class Current: 257/684
• CPC Class Codes: G06K 19/07728 the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/0775 arrangements for connecting the integrated circuit to the antenna
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01Q 1/2216 : used in interrogator/reader equipment
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them

Abstract

In inlets used for ID tags and the like, a defective connection between an integrated circuit part and an antenna is suppressed by improvement of tolerance for a bending or a pressing pressure. The integrated circuit part includes a semiconductor chip and a multilayer substrate having a concave portion. The semiconductor chip is mounted on the bottom of the concave portion. The multilayer substrate includes a connection electrode at the top surface and a connection electrode connected to the semiconductor chip on the bottom of the concave portion. The connection electrode on the bottom of the concave portion is connected to the connection electrode at the top surface by a penetration electrode inside a multilayer substrate. By such a configuration, the semiconductor chip is connected to the antenna.

Claims

1. A semiconductor device comprising:

a base material comprising flexible material;

a body structure having a concave portion and including a plurality of dielectric layers;

a first side electrode provided on a first side surface, a top surface and a bottom surface of the body structure;

a second side electrode provided on a second side surface, which is opposite to the first side surface, the top surface and the bottom surface of the body structure;

a semiconductor chip fixed on a bottom surface of the concave portion;

a conductor formed inside the body structure;

a connection electrode connected to the semiconductor chip via the conductor; and

an antenna connected to the connection electrode,

wherein the antenna is provided over the body structure,

wherein the semiconductor chip is surrounded by the base material and the body structure,

wherein the body structure has stronger rigidity than the base material,

wherein a first capacitor electrode, a first dielectric layer of the plurality of dielectric layers, a second capacitor electrode, a second dielectric layer of the plurality of dielectric layers, a third capacitor electrode, a third dielectric layer of the plurality of dielectric layers, a fourth capacitor electrode, and a fourth dielectric layer of the plurality of dielectric layers are stacked in this order under the semiconductor chip,

wherein the first capacitor electrode and the third capacitor electrode are connected to the first side electrode,

wherein the second capacitor electrode and the fourth capacitor electrode are connected to the second side electrode, and

wherein the first capacitor electrode, the second capacitor electrode, the third capacitor electrode, and fourth capacitor electrode overlap each other,

wherein at least one of the plurality of dielectric layers comprise nanoparticles of SiC.

2. The semiconductor device according to claim 1 wherein the connection electrode is formed on the top surface of the body structure.

3. The semiconductor device according to claim 1, wherein the plurality of dielectric layers includes a ceramic material.

4. A semiconductor device comprising:

a base material comprising flexible material;

a body structure having a concave portion and including a plurality of dielectric layers;

a first side electrode provided on a first side surface, a top surface and a bottom surface of the body structure;

a second side electrode provided on a second side surface, which is opposite to the first side surface, the top surface and the bottom surface of the body structure;

a semiconductor chip fixed on a bottom surface of the concave portion;

a penetration electrode which penetrates at least one layer of the plurality of dielectric layers;

a connection electrode connected to the semiconductor chip via the penetration electrode; and

an antenna connected to the connection electrode,

wherein the antenna is provided over the body structure,

wherein the semiconductor chip is surrounded by the base material and the body structure,

wherein the body structure has stronger rigidity than the base material,

wherein a first capacitor electrode, a first dielectric layer of the plurality of dielectric layers, a second capacitor electrode, a second dielectric layer of the plurality of dielectric layers, a third capacitor electrode, a third dielectric layer of the plurality of dielectric layers, a fourth capacitor electrode, and a fourth dielectric layer of the plurality of dielectric layers are stacked in this order under the semiconductor chip,

wherein the first capacitor electrode and the third capacitor electrode are connected to the first side electrode,

wherein the second capacitor electrode and the fourth capacitor electrode are connected to the second side electrode, and

wherein the first capacitor electrode, the second capacitor electrode, the third capacitor electrode, and fourth capacitor electrode overlap each other,

wherein at least one of the plurality of dielectric layers comprise nanoparticles of SiC.

5. The semiconductor device according to claim 4, wherein the connection electrode is formed on the top surface of the body structure.

6. The semiconductor device according to claim 4, wherein the plurality of dielectric layers include a ceramic material.

7. A semiconductor device comprising:

a base material comprising flexible material;

a body structure having a concave portion and including a plurality of dielectric layers;

a side electrode provided on a side surface, a top surface and a bottom surface of the body structure;

a semiconductor chip fixed on a bottom surface of the concave portion;

a penetration electrode which penetrates at least one layer of the plurality of dielectric layers;

a connection electrode connected to the semiconductor chip via the penetration electrode;

an antenna connected to the connection electrode;

a conductive layer formed on the bottom of the concave portion; and

a passive element which is formed inside the body structure, is connected to the semiconductor chip via the conductive layer and is in contact with the side electrode, wherein the antenna is provided over the body structure,

wherein the semiconductor chip is surrounded by the base material and the body structure

wherein the body structure has stronger rigidity than the base material,

wherein at least one of the plurality of dielectric layers comprise nanoparticles of SiC.

8. The semiconductor device according to claim 7, wherein the passive element is a resistor, a capacitor or a coil.

9. The semiconductor device according to claim 7, wherein the connection electrode is formed on the top surface of the body structure.

10. The semiconductor device according to claim 7, wherein the plurality of dielectric layers include a ceramic material.

11. A semiconductor device comprising:

a base material comprising flexible material;

a body structure having a concave portion and including a plurality of dielectric layers;

a side electrode provided on a side surface, a top surface and a bottom surface of the body structure;

a semiconductor chip fixed on a bottom surface of the concave portion;

a penetration electrode which penetrates at least one layer of the plurality of dielectric layers;

a connection electrode connected to the semiconductor chip via the penetration electrode;

a first antenna connected to the connection electrode;

a conductive layer formed on the bottom of the concave portion; and

a second antenna which is formed inside the body structure and is connected to the semiconductor chip via the conductive layer,

wherein the first antenna is provided over the body structure,

wherein the second antenna is provided under the semiconductor chip and connected to the side electrode,

wherein the semiconductor chip is surrounded by the base material and the body structure,

wherein the body structure has stronger rigidity than the base material,

wherein at least one of the plurality of dielectric layers comprise nanoparticles of SiC.

12. The semiconductor device according to claim 11,

wherein the plurality of dielectric layers include a first dielectric layer and a second dielectric layer,

wherein the second antenna includes a penetration electrode, a first wiring and a second wiring,

wherein the penetration electrode penetrates the first dielectric layer and connects the first wiring and the second wiring,

wherein the first wiring, the first dielectric layer, the second wiring and the second dielectric layer are stacked in this order.

13. The semiconductor device according to claim 11, wherein the connection electrode is formed on the top surface of the body structure.

14. The semiconductor device according to claim 11, wherein the plurality of dielectric layers include a ceramic material.