Simplified pitch doubling process flow
First Claim
1. A method for fabricating a semiconductor device, the method comprising:
- patterning a layer of photoresist material to form a plurality of mandrels formed of photoresist in a device array region;
depositing an oxide material on the plurality of mandrels and over a device peripheral region at a deposition temperature of about 200°
C. or less;
forming a pattern of photoresist material over the oxide material in the device peripheral region;
anisotropically etching the oxide material from exposed horizontal surfaces in the device array region, thereby forming spacers from the oxide material, wherein the pattern of the photoresist material extends over the ends of the spacers;
transferring a pattern defined by the spacers to an underlying material, wherein the pattern of the photoresist material blocks transfer of the ends of the spacers to the underlying material; and
selectively etching photoresist material from the device array region and from the device peripheral region.
8 Assignments
0 Petitions
Accused Products
Abstract
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels in a device array region. The method further comprises depositing an oxide material over the plurality of mandrels and over a device peripheral region. The method further comprises forming a pattern of photoresist material over the oxide material in the device peripheral region. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces in the device array region. The method further comprises selectively etching photoresist material from the device array region and from the device peripheral region.
-
Citations
19 Claims
-
1. A method for fabricating a semiconductor device, the method comprising:
-
patterning a layer of photoresist material to form a plurality of mandrels formed of photoresist in a device array region; depositing an oxide material on the plurality of mandrels and over a device peripheral region at a deposition temperature of about 200°
C. or less;forming a pattern of photoresist material over the oxide material in the device peripheral region; anisotropically etching the oxide material from exposed horizontal surfaces in the device array region, thereby forming spacers from the oxide material, wherein the pattern of the photoresist material extends over the ends of the spacers; transferring a pattern defined by the spacers to an underlying material, wherein the pattern of the photoresist material blocks transfer of the ends of the spacers to the underlying material; and selectively etching photoresist material from the device array region and from the device peripheral region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
Specification