Trench gate power semiconductor device
First Claim
1. A trench gate power semiconductor device comprising:
- a semiconductor layer of first conductive type;
a body region of second conductive type opposite to the first conductive type, the body region formed in a vicinity of an upper surface of the semiconductor layer of first conductive type;
a plurality of first trenches formed so as to reach the semiconductor layer of first conductive type from an upper surface side of the body region of second conductive type; and
gates formed in the plurality of first trenches, whereina second trench of a depth smaller than a depth of the body region of second conductive type and including a metal layer connected with an electrode different from a gate electrode of electrodes formed on an upper surface of the semiconductor layer of first conductive type therein is formed in the body region of second conductive type, anda carrier extracting region of second conductive type is formed on a lower surface of the second trench such that the carrier extracting region is connected to the metal layer and reaches the semiconductor layer of first conductive type.
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Accused Products
Abstract
A trench gate power MOSFET (1) includes: an n−-type epitaxial layer (12); a p-type body region (20) formed in the vicinity of an upper surface of the n−-type epitaxial layer (12); a plurality of trenches (14) formed so as to reach the n−-type epitaxial layer (12) from an upper surface of the p-type body region (20); and gates (18) formed in the trenches (14). In some regions facing the p-type body region (20) in the n−-type epitaxial layer (12), p-type carrier extracting regions (26a, 26b, 26c) are formed. According to the trench gate power MOSFET (1), holes generated in a cell region can be effectively collected through the p-type carrier extracting regions (26a, 26b, 26c) so as to further increase a speed of the switching operation.
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Citations
12 Claims
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1. A trench gate power semiconductor device comprising:
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a semiconductor layer of first conductive type; a body region of second conductive type opposite to the first conductive type, the body region formed in a vicinity of an upper surface of the semiconductor layer of first conductive type; a plurality of first trenches formed so as to reach the semiconductor layer of first conductive type from an upper surface side of the body region of second conductive type; and gates formed in the plurality of first trenches, wherein a second trench of a depth smaller than a depth of the body region of second conductive type and including a metal layer connected with an electrode different from a gate electrode of electrodes formed on an upper surface of the semiconductor layer of first conductive type therein is formed in the body region of second conductive type, and a carrier extracting region of second conductive type is formed on a lower surface of the second trench such that the carrier extracting region is connected to the metal layer and reaches the semiconductor layer of first conductive type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification