Group III nitride-based compound semiconductor light-emitting device and production method therefor
DCFirst Claim
1. A method for producing a Group III nitride-based compound semiconductor light-emitting device, comprising:
- forming metallic aluminum regions on a substrate;
forming a Group III nitride-based compound semiconductor single-crystal layer, via a buffer layer, on a portion of the substrate on which no metallic aluminum regions are formed, so that the metallic aluminum regions are covered with the Group III nitride-based compound semiconductor single-crystal layer; and
stacking, on the Group III nitride-based compound semiconductor single-crystal layer, a Group III nitride-based compound semiconductor layer having a predetermined composition and containing an impurity of interest.
1 Assignment
Litigations
0 Petitions
Accused Products
Abstract
Provided is a Group III nitride-based compound semiconductor light-emitting device including aluminum regions. The Group III nitride-based compound semiconductor light-emitting device includes a sapphire substrate; aluminum regions which are formed on the substrate; an AlN buffer layer; an Si-doped GaN n-contact layer; an n-cladding layer formed of multiple layer units, each including an undoped In0.1Ga0.9N layer, an undoped GaN layer, and a silicon (Si)-doped GaN layer; an MQW light-emitting layer including alternately stacked eight well layers formed of In0.2Ga0.8N and eight barrier layers formed of GaN and Al0.06Ga0.94N; a p-cladding layer formed of multiple layers including a p-type Al0.3Ga0.7N layer and a p-type In0.08Ga0.92N layer; a p-contact layer having a layered structure including two p-type GaN layers having different magnesium concentrations; and an ITO light-transmitting electrode.
-
Citations
7 Claims
-
1. A method for producing a Group III nitride-based compound semiconductor light-emitting device, comprising:
-
forming metallic aluminum regions on a substrate; forming a Group III nitride-based compound semiconductor single-crystal layer, via a buffer layer, on a portion of the substrate on which no metallic aluminum regions are formed, so that the metallic aluminum regions are covered with the Group III nitride-based compound semiconductor single-crystal layer; and stacking, on the Group III nitride-based compound semiconductor single-crystal layer, a Group III nitride-based compound semiconductor layer having a predetermined composition and containing an impurity of interest. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
Specification