Semiconductor device and method for manufacturing same
First Claim
1. A semiconductor device with plural active elements and plural passive elements formed on a semiconductor substrate, the semiconductor device comprising:
- plural field areas on the semiconductor substrate; and
an insulation separation trench that surrounds the plural field areas, whereinthe insulation separation trench penetrates the semiconductor substrate thereby dividing the semiconductor substrate into the plural field areas,each of the plural field areas includes one of an active element from among the plural active elements and a passive element from among the plural passive elements, andat least two elements among the plural active elements and the plural passive elements have a pair of power electrodes for power supply disposed in a dispersed manner respectively on both sides of the semiconductor substrate, each of the at least two elements being a double sided electrode element.
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Accused Products
Abstract
A semiconductor device having plural active and passive elements on one semiconductor substrate is manufactured in the following cost effective manner even when the active and passive elements include double sided electrode elements. When the semiconductor substrate is divided into plural field areas, an insulation separation trench that penetrates the semiconductor substrate surrounds each of the field areas, and each of the either of the plural active elements or the plural passive elements. Further, each of the plural elements has a pair of power electrodes for power supply respectively disposed on each of both sides of the semiconductor substrate to serve as the double sided electrode elements.
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Citations
30 Claims
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1. A semiconductor device with plural active elements and plural passive elements formed on a semiconductor substrate, the semiconductor device comprising:
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plural field areas on the semiconductor substrate; and an insulation separation trench that surrounds the plural field areas, wherein the insulation separation trench penetrates the semiconductor substrate thereby dividing the semiconductor substrate into the plural field areas, each of the plural field areas includes one of an active element from among the plural active elements and a passive element from among the plural passive elements, and at least two elements among the plural active elements and the plural passive elements have a pair of power electrodes for power supply disposed in a dispersed manner respectively on both sides of the semiconductor substrate, each of the at least two elements being a double sided electrode element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of manufacturing a semiconductor device with plural active elements and plural passive elements formed on a semiconductor substrate, the semiconductor device comprising:
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plural field areas on the semiconductor substrate; and an insulation separation trench that surrounds the plural field areas, wherein the insulation separation trench penetrates the semiconductor substrate thereby dividing the semiconductor substrate into the plural field areas, each of the plural field areas includes one of an active element from among the plural active elements and a passive element from among the plural passive elements, and at least two elements among the plural active elements and the plural passive elements have a pair of power electrodes for power supply disposed in a dispersed manner respectively on both sides of the semiconductor substrate, each of the at least two elements being a double sided electrode element, the method of manufacturing the semiconductor device comprising; preparing an element formation semiconductor substrate having a predetermined thickness; forming, as a yet-penetrating insulation separation trench formation process, a yet-penetrating insulation separation trench from a first side surface of the element formation semiconductor substrate by a predetermined depth for forming the plural field areas and surrounding each of the plural field areas; polishing, as a substrate polish process, the element formation substrate from a second side to expose a tip of the yet-penetrating insulation separation trench for forming the element formation substrate as the semiconductor substrate and for forming the yet-penetrating insulation separation trench as the insulation separation trench; forming, as a first side element formation process, parts of the plural active elements and the plural passive elements, including power electrodes, that are on the first side of the element formation semiconductor substrate; and forming, as a second side element formation process, parts of the plural active elements and the plural passive elements, including power electrodes, that are on the second side of the semiconductor substrate after the polishing the element formation substrate. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A semiconductor device with plural active elements and plural passive elements formed on a semiconductor substrate, the semiconductor device comprising:
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plural field areas on the semiconductor substrate; and an insulation separation trench that surrounds the plural field areas, wherein the insulation separation trench penetrates the semiconductor substrate for dividing the semiconductor substrate into the plural field areas, each of the plural field areas includes one of an active element from among the plural active elements and a passive element from among the plural passive elements, and at least two elements among the plural active elements and the plural passive elements have a pair of power electrodes for power supply disposed on both sides of the semiconductor substrate, a half-bridge circuit is formed in the semiconductor device, the semiconductor device has a vertical transistor element composed of one of two vertical MOS transistor elements and two IGBT elements of a same structure as double sided electrode elements, the half-bridge circuit is formed by two vertical transistor elements connected in series with another double sided electrode element interposed therebetween, and the half-bridge circuit outputs its output from a connection point of two vertical transistor elements. - View Dependent Claims (25, 26, 30)
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27. A semiconductor device with plural active elements and plural passive elements formed on a semiconductor substrate, the semiconductor device comprising:
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plural field areas on the semiconductor substrate; and an insulation separation trench that surrounds the plural field areas, wherein the insulation separation trench penetrates the semiconductor substrate for dividing the semiconductor substrate into the plural field areas, each of the plural field areas includes one of an active element from among the plural active elements and a passive element from among the plural passive elements, and at least two elements among the plural active elements and the plural passive elements have a pair of power electrodes for power supply disposed on both sides of the semiconductor substrate, two semiconductor devices are paired to form a half-bridge circuit, each of the two semiconductor devices includes, as a double sided electrode element, a vertical transistor element of a same structure made of one of a vertical MOS transistor element and an IGBT element, the two semiconductor devices are layered with one lead interposed therebetween, the vertical transistor element in each of the two semiconductor devices is connected with each other in series through the one lead, and the half-bridge circuit outputs an output of the half-bridge circuit from the one lead. - View Dependent Claims (28, 29)
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Specification