Dry etching method for oxide semiconductor film

• US 8,034,248 B2
• Filed: 05/22/2007
• Issued: 10/11/2011
• Est. Priority Date: 06/13/2006
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Chang, Chienliu
• Primary Examiner(s): Ahmed; Shamim
• Assistant Examiner(s): Lin; Patti
• Application Number:
  US11/802,276
• Publication Number:
  US 20070287296A1
• Time in Patent Office: 1,603 Days
• Field of Search: 216/58, 438/706, 438/718
• US Class Current: 216/58
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

Claims

1. A dry etching method for an amorphous oxide semiconductor film containing at least In, Ga, and Zn and having an electron carrier concentration of less than 10¹⁸/cm³ by use of plasma, comprising etching in a gas atmosphere containing a hydrocarbon, wherein the etching is performed with a reaction pressure in a range of 0.6 Pa or more to 3.5 Pa or less to suppress generation of a deposit of a nonvolatile material, with an RF power density in a range of 0.1 W/cm² or more to 20 W/cm² or less and with a surface temperature of the amorphous oxide semiconductor film in a range of −

20°

C. or more to 200°

C. or less.

2. The dry etching method for an amorphous oxide semiconductor film according to claim 1, wherein the hydrocarbon is at least one selected from the group consisting of methane (CH₄), ethane (C₂H₆), propane (C₃H₈), butane (C₄H₁₀), ethylene (C₂H₄), propylene (C₃H₆) and acetylene (C₂H₂).

3. The dry etching method for an amorphous oxide semiconductor film according to claim 1, wherein the etching is performed using a gas comprising a mixture gas of a hydrocarbon and Ar.

4. The dry etching method for an amorphous oxide semiconductor film according to claim 3, wherein a ratio of the Ar in the mixture gas of a hydrocarbon and Ar is in a range of 5 mol % or more to 80 mol % or less.