Light emitting diode having vertical topology and method of making the same
First Claim
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1. A method of making a light emitting diode (LED) having vertical topology, comprising:
- forming a semiconductor layer on a substrate, the semiconductor layer comprising a first-type layer, an active layer on the first-type layer, and a second-type layer on the active layer;
forming a first electrode on the semiconductor layer, the first electrode comprising an electrical contact and a reflective electrode on the electrical contact;
forming a connection metal layer on the first electrode, the connection metal layer comprising a first metal layer on the first electrode, a diffusion barrier layer on the first metal layer, and a second metal layer on the diffusion barrier layer;
forming a supporting layer on the connection metal layer;
separating the substrate from the semiconductor layer; and
forming a second electrode on a surface of the semiconductor layer exposed by the separation of the substrate.
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Abstract
An LED having vertical topology and a method of making the same is capable of improving a luminous efficiency and reliability, and is also capable of achieving mass productivity. The method includes forming a semiconductor layer on a substrate; forming a first electrode on the semiconductor layer; forming a supporting layer on the first electrode; generating an acoustic stress wave at the interface between the substrate and semiconductor layer, thereby separating the substrate from the semiconductor layer; and forming a second electrode on the semiconductor layer exposed by the separation of the substrate.
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Citations
36 Claims
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1. A method of making a light emitting diode (LED) having vertical topology, comprising:
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forming a semiconductor layer on a substrate, the semiconductor layer comprising a first-type layer, an active layer on the first-type layer, and a second-type layer on the active layer; forming a first electrode on the semiconductor layer, the first electrode comprising an electrical contact and a reflective electrode on the electrical contact; forming a connection metal layer on the first electrode, the connection metal layer comprising a first metal layer on the first electrode, a diffusion barrier layer on the first metal layer, and a second metal layer on the diffusion barrier layer; forming a supporting layer on the connection metal layer; separating the substrate from the semiconductor layer; and forming a second electrode on a surface of the semiconductor layer exposed by the separation of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification