Semiconductor light-emitting device with improved light extraction efficiency
First Claim
Patent Images
1. A semiconductor light-emitting device, comprising:
- a substrate used in growing a semiconductor crystal;
a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate, covering an entire area between opposing side surfaces of the substrate,wherein the substrate has side patterns formed along all edges of the upper surface of the substrate and a plurality of internal patterns, and the side patterns and the internal patterns are differently shaped.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
-
Citations
11 Claims
-
1. A semiconductor light-emitting device, comprising:
-
a substrate used in growing a semiconductor crystal; a first conductive clad layer, an active layer, and a second conductive clad layer sequentially grown on an upper surface of the substrate, covering an entire area between opposing side surfaces of the substrate, wherein the substrate has side patterns formed along all edges of the upper surface of the substrate and a plurality of internal patterns, and the side patterns and the internal patterns are differently shaped. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
Specification