Manufacturing method of wiring and storage element

• US 8,075,945 B2
• Filed: 02/27/2008
• Issued: 12/13/2011
• Est. Priority Date: 03/05/2007
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yoshizumi, Kensuke, Harima, Noriko, Yamada, Tomoko
• Primary Examiner(s): Talbot, Brian K
• Application Number:
  US12/038,453
• Publication Number:
  US 20080220155A1
• Time in Patent Office: 1,385 Days
• Field of Search: 427/98.2, 427/98.3, 427/558
• US Class Current: 427/98.3
• CPC Class Codes: B81C 1/00095 Interconnects
• CPC Class Codes: B81C 2201/0184 Digital lithography, e.g. using an inkjet print-head
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 2203/013 Inkjet printing, e.g. for printing insulating material or resist using ink-jet printing to form a conductive pattern H05K3/125
• CPC Class Codes: H05K 2203/087 Using a reactive gas
• CPC Class Codes: H05K 3/125 by ink-jet printing
• CPC Class Codes: H05K 3/1283 After-treatment of the printed patterns, e.g. sintering or curing methods
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

In a coating method, such as a droplet discharge method which requires baking, it is an object of the present invention to reduce the baking temperature at the time of forming a wiring and a conductive film. As a feature of the present invention, a composition, in which nanoparticles of a conductive material are dispersed in a solvent, is discharged using a droplet discharge method, and then dried to vaporize the solvent. Then, pretreatment using active oxygen is performed. After which, baking is then performed, whereby a wiring and a conductive film are formed. By performance of the pretreatment by active oxygen before the baking, a baking temperature at the time of forming the wiring and conductive film can be reduced.

Claims

1. A method for manufacturing a wiring comprising the steps of:

forming a partition wall except a formation region of a wiring;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the wiring;

drying the composition;

exposing the composition to an oxygen atmosphere after the drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation under the oxygen atmosphere so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen.

2. The method for manufacturing a wiring according to claim 1, wherein the active oxygen is generated by irradiation of ozone with an ultraviolet ray.

3. The method for manufacturing a wiring according to claim 2, wherein the ultraviolet irradiation is performed using at least one of a low-pressure mercury lamp and an excimer lamp.

4. The method for manufacturing a wiring according to claim 2, wherein the ozone is generated by irradiation of oxygen with an ultraviolet ray having a 240 nm wavelength.

5. The method for manufacturing a wiring according to claim 2, wherein parts of the ozone and the active oxygen are generated by irradiation of oxygen with an ultraviolet ray having a wavelength of less than or equal to 175 nm.

6. The method for manufacturing a wiring according to claim 1, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

7. A method for manufacturing a wiring comprising the steps of:

forming a partition wall except a formation region of a wiring;

discharging a composition in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the wiring;

drying the composition;

exposing the composition to an ozone atmosphere after the drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation under the ozone atmosphere so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen.

8. The method for manufacturing a wiring according to claim 7, wherein the ultraviolet irradiation is performed using at least one of a low-pressure mercury lamp and an excimer lamp.

9. The method for manufacturing a wiring according to claim 7, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

10. A method for manufacturing a wiring comprising the steps of:

forming a partition wall except a formation region of a wiring;

discharging a composition in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the wiring;

drying the composition;

exposing the composition to air after the drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation with an ultraviolet ray of less than or equal to 240 nm in air so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen.

11. The method for manufacturing a wiring according to claim 10, wherein the ultraviolet irradiation is performed using at least one of a low-pressure mercury lamp and an excimer lamp.

12. The method for manufacturing a wiring according to claim 10, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

13. A method for manufacturing a wiring comprising the steps of:

forming a partition wall except a formation region of a wiring;

discharging a composition in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the wiring;

drying the composition;

exposing the composition to air after the drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation with an ultraviolet ray of less than or equal to 175 nm in air so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen.

14. The method for manufacturing a wiring according to claim 13, wherein the ultraviolet irradiation is performed using an excimer lamp.

15. The method for manufacturing a wiring according to claim 13, wherein a grain size of the nanoparticles is greater than or equal to 1 nm and less than or equal to 200 nm.

16. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

forming a partition wall except a formation region of a second conductive layer over the memory layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the second conductive layer;

drying the composition;

exposing the composition to an oxygen atmosphere after the step of drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation under the oxygen atmosphere so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen to form the second conductive layer.

17. The method for manufacturing a storage element according to claim 16, wherein the memory layer is an organic compound layer.

18. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

forming a partition wall except a formation region of a second conductive layer over the memory layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the second conductive layer;

drying the composition;

exposing the composition to an ozone atmosphere after the drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation under the ozone atmosphere so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen to form the second conductive layer.

19. The method for manufacturing a storage element according to claim 18, wherein the memory layer is an organic compound layer.

20. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

forming a partition wall except a formation region of a second conductive layer over the memory layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the second conductive layer;

drying the composition;

exposing the composition to air after the drying step;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation with an ultraviolet ray of less than or equal to 240 nm in air so that the composition is not irradiated by the ultraviolet irradiation; and

performing baking after the step of generating the active oxygen to form the second conductive layer.

21. The method for manufacturing a storage element according to claim 20, wherein the memory layer is an organic compound layer.

22. A method for manufacturing a storage element comprising the steps of:

forming a first conductive layer;

forming a memory layer over the first conductive layer;

forming a partition wall except a formation region of a second conductive layer over the memory layer;

discharging a composition, in which nanoparticles of a conductive material are dispersed in a solvent, into the formation region of the second conductive layer;

drying the composition;

exposing the composition to air after the drying steps;

generating and exposing the composition to an active oxygen by using an ultraviolet irradiation with an ultraviolet ray of less than or equal to 175 nm in air so that the composition is not irradiated by the ultraviolet irradiation; and

then

performing baking after the step of generating the active oxygen to form the second conductive layer.

23. The method for manufacturing a storage element according to claim 22, wherein the memory layer is an organic compound layer.