Semiconductor device structures and related processes
DC CAFCFirst Claim
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1. A semiconductor device structure, comprising:
- a semiconductor layer;
a gate which is positioned in a first trench within said semiconductor layer, and is capacitively coupled to control vertical conduction from a first-conductivity-type source through second-conductivity-type portions of said layer near said trench;
recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches;
a first additional diffusion component of a second conductivity type lying at least partially beneath said respective second trenches; and
a second additional diffusion component of said first conductivity type lying at least partially within said second-conductivity-type portions of said layer;
whereby said first additional diffusion component reduces depletion of said second-conductivity-type portions of said layer in the OFF state;
and whereby said second additional diffusion component reduces the on-resistance of the device in the ON state.
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Abstract
Improved highly reliable power RFP structures and fabrication and operation processes. The structure includes plurality of localized dopant concentrated zones beneath the trenches of RFPs, either floating or extending and merging with the body layer of the MOSFET or connecting with the source layer through a region of vertical doped region. This local dopant zone decreases the minority carrier injection efficiency of the body diode of the device and alters the electric field distribution during the body diode reverse recovery.
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Citations
6 Claims
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1. A semiconductor device structure, comprising:
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a semiconductor layer; a gate which is positioned in a first trench within said semiconductor layer, and is capacitively coupled to control vertical conduction from a first-conductivity-type source through second-conductivity-type portions of said layer near said trench; recessed field plates, positioned in proximity to and capacitively coupled to said semiconductor material;
said recessed field plates being positioned in respective second trenches;a first additional diffusion component of a second conductivity type lying at least partially beneath said respective second trenches; and a second additional diffusion component of said first conductivity type lying at least partially within said second-conductivity-type portions of said layer; whereby said first additional diffusion component reduces depletion of said second-conductivity-type portions of said layer in the OFF state; and whereby said second additional diffusion component reduces the on-resistance of the device in the ON state. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification