Vertical topology light emitting device using a conductive support structure
First Claim
1. A vertical topology light emitting device, comprising:
- a semiconductive device having a first surface, a second surface and a light emitting layer, the semiconductive device comprises a first-type GaN-based layer, an active layer, and a second-type GaN-based layer;
a first electrode on the first surface of the semiconductive device;
a reflective structure on the second surface of the semiconductive device, wherein the reflective structure serves as a second electrode to the semiconductive device, wherein the reflective structure reflects light from the semiconductive device back through the first surface of the semiconductive device, wherein the reflective structure comprises a metal contact on the second surface of the semiconductor device and a reflective metal layer directly on the metal contact, wherein the reflective metal layer is thicker than the metal contact, wherein the metal contact is a pure metal and directly contacts the first-type GaN-based layer, and wherein the reflective metal layer and the metal contact comprise different materials;
a conductive adhesion structure on the reflective structure;
a conductive support structure on the conductive adhesion structure;
a metal contact pad on the first electrode; and
an inter-layer between the first electrode and the metal contact pad, wherein the inter-layer is located over the conductive adhesion structure,wherein the conductive adhesion structure comprises a first metallic layer and a second metallic layer, wherein the first metallic layer is located proximate to the conductive support structure and the second metallic layer is located proximate to the reflective structure, wherein the first metallic layer comprises Au, and wherein the first metallic layer is thicker than the second metallic layer.
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Accused Products
Abstract
A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal techniques. Trenches that define the boundaries of the individual devices are formed through the semiconductor layers and into the insulating substrate, beneficially by inductive coupled plasma reactive ion etching. A first support structure is attached to the semiconductor layers. The hard substrate is then removed, beneficially by laser lift off. A second supporting structure, preferably conductive, is substituted for the hard substrate and the first supporting structure is removed. Individual devices are then diced, beneficially by etching through the second supporting structure. A protective photo-resist layer can protect the semiconductor layers from the attachment of the first support structure. A conductive bottom contact (possibly reflective) can be inserted between the second supporting structure and the semiconductor layers.
133 Citations
30 Claims
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1. A vertical topology light emitting device, comprising:
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a semiconductive device having a first surface, a second surface and a light emitting layer, the semiconductive device comprises a first-type GaN-based layer, an active layer, and a second-type GaN-based layer; a first electrode on the first surface of the semiconductive device; a reflective structure on the second surface of the semiconductive device, wherein the reflective structure serves as a second electrode to the semiconductive device, wherein the reflective structure reflects light from the semiconductive device back through the first surface of the semiconductive device, wherein the reflective structure comprises a metal contact on the second surface of the semiconductor device and a reflective metal layer directly on the metal contact, wherein the reflective metal layer is thicker than the metal contact, wherein the metal contact is a pure metal and directly contacts the first-type GaN-based layer, and wherein the reflective metal layer and the metal contact comprise different materials; a conductive adhesion structure on the reflective structure; a conductive support structure on the conductive adhesion structure; a metal contact pad on the first electrode; and an inter-layer between the first electrode and the metal contact pad, wherein the inter-layer is located over the conductive adhesion structure, wherein the conductive adhesion structure comprises a first metallic layer and a second metallic layer, wherein the first metallic layer is located proximate to the conductive support structure and the second metallic layer is located proximate to the reflective structure, wherein the first metallic layer comprises Au, and wherein the first metallic layer is thicker than the second metallic layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification