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Thin film transistor, method of manufacturing the same, and flat panel display having the same

  • US 8,188,472 B2
  • Filed: 01/07/2008
  • Issued: 05/29/2012
  • Est. Priority Date: 04/19/2007
  • Status: Expired due to Fees
First Claim
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1. A thin film transistor (TFT) comprising:

  • a gate;

    a gate insulating layer contacting the gate;

    a channel layer contacting the gate insulating layer on a side opposite the gate, the channel layer including an amorphous oxide semiconductor layer;

    a source contacting a first end of the channel layer and consisting of a first conductive oxide layer;

    a drain contacting a second end of the channel layer and consisting of a second conductive oxide layer;

    a first low resistance metal layer on about the entire upper surface of the first conductive oxide layer; and

    a second low resistance metal layer on about the entire upper surface of the second conductive oxide layer.

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