Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers
First Claim
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1. A semiconductor device comprising:
- a semiconductor substrate;
a semiconductor element formed in a main surface of the semiconductor substrate;
a first insulating film containing silicon and oxygen formed over the main surface in which the semiconductor element of the semiconductor substrate is formed;
a first opening formed in the first insulating film;
a first conductor part embedded in the first opening;
a second insulating film containing silicon and oxygen, the second insulating film having portions formed directly on and in direct contact with an upper surface of the first insulating film;
a third insulating film containing silicon and carbon formed over the second insulating film;
a fourth insulating film containing silicon and oxygen formed over the third insulating film;
a wire opening formed in the second, third, and fourth insulating films; and
a first wire embedded in the wire opening and electrically coupled with the first conductor part, at least part of a lower surface of the first wire being in direct contact with the upper surface of the first insulating film,wherein the second insulating film has a higher density of Si atoms than that of the first insulating film, andwherein the third insulating film is a SiCN film.
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Abstract
The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating films 10, 11 are formed. In the insulating films 10, 11 a contact hole is formed and a plug is embedded therein. Over the insulating film 11 in which the plug is embedded, insulating films 14, 15, 16 are formed and an opening is formed in the insulating films 14, 15, 16 and a wire is embedded therein. The insulating film 15 is an etching stopper film when etching the insulating film 16 in order to form the opening, containing silicon and carbon. The insulating film 11 has a high hygroscopicity and the insulating film 15 has a low moisture resistance, however, by interposing the insulating film 14 therebetween and making the insulating film 14 have a higher density of the number of Si (silicon) atoms than that of the insulating film 11, an electrically weak interface is prevented from being formed.
14 Citations
25 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a semiconductor element formed in a main surface of the semiconductor substrate; a first insulating film containing silicon and oxygen formed over the main surface in which the semiconductor element of the semiconductor substrate is formed; a first opening formed in the first insulating film; a first conductor part embedded in the first opening; a second insulating film containing silicon and oxygen, the second insulating film having portions formed directly on and in direct contact with an upper surface of the first insulating film; a third insulating film containing silicon and carbon formed over the second insulating film; a fourth insulating film containing silicon and oxygen formed over the third insulating film; a wire opening formed in the second, third, and fourth insulating films; and a first wire embedded in the wire opening and electrically coupled with the first conductor part, at least part of a lower surface of the first wire being in direct contact with the upper surface of the first insulating film, wherein the second insulating film has a higher density of Si atoms than that of the first insulating film, and wherein the third insulating film is a SiCN film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A semiconductor device comprising:
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a semiconductor substrate; a semiconductor element formed in a main surface of the semiconductor substrate, having a source region, a drain region and a gate electrode; a first interlayer formed over the main surface and the semiconductor element, the first interlayer having a first insulating film containing silicon and oxygen; a plug formed in the first interlayer and electrically connected with the source region, the drain region or the gate electrode; a second interlayer formed on the first interlayer, the second interlayer having a second insulating film containing silicon and oxygen, a third insulating film containing silicon and carbon formed on the second insulating film and a fourth insulating film containing silicon and oxygen formed on the third insulating film; and a wire formed in the second interlayer and electrically connected with the plug, the wire having a lower surface in contact with an upper surface of the first interlayer and an upper surface of the plug, wherein the second insulating film has a higher density of Si atoms than that of the first insulating film, and wherein the third insulating film is a SiCN film. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification
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Current AssigneeRenesas Electronics Corporation
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Original AssigneeRenesas Electronics Corporation
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InventorsFurusawa, Takeshi, Kamoshima, Takao, Amishiro, Masatsugu, Suzumura, Naohito, Fukui, Shoichi, Okada, Masakazu
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Primary Examiner(s)Mai, Anh
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Application NumberUS12/883,031Publication NumberTime in Patent Office643 DaysField of Search257/748, 257/758, 257/760, 257/759US Class Current257/760CPC Class CodesH01L 21/76832 Multiple layersH01L 21/76834 formation of thin insulatin...H01L 21/76883 Post-treatment or after-tre...
