Hermetically sealing a device without a heat treating step and the resulting hermetically sealed device
First Claim
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1. A device comprising:
- a substrate plate;
at least one component;
a single-layer hermetic seal consisting essentially of a non-heat treated Sn2+-containing inorganic oxide sealing material, wherein said at least one component is hermetically sealed between said non-heat treated Sn2+-containing inorganic oxide sealing material and said substrate plate, and wherein said non-heat treated Sn2+ containing inorganic oxide sealing material independently forms said single-layer hermetic seal; and
wherein said non-heat treated Sn2+-containing inorganic oxide sealing material has the following composition;
Sn (59-89 wt %);
P (0-13 wt %);
O (6-25 wt %); and
F (0-12 wt %).
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Abstract
A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn2+-containing inorganic oxide material or a low liquidus temperature inorganic material.
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Citations
5 Claims
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1. A device comprising:
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a substrate plate; at least one component; a single-layer hermetic seal consisting essentially of a non-heat treated Sn2+-containing inorganic oxide sealing material, wherein said at least one component is hermetically sealed between said non-heat treated Sn2+-containing inorganic oxide sealing material and said substrate plate, and wherein said non-heat treated Sn2+ containing inorganic oxide sealing material independently forms said single-layer hermetic seal; and wherein said non-heat treated Sn2+-containing inorganic oxide sealing material has the following composition; Sn (59-89 wt %); P (0-13 wt %); O (6-25 wt %); and F (0-12 wt %). - View Dependent Claims (2, 3, 4, 5)
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Specification