Through-silicon via formed with a post passivation interconnect structure
First Claim
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1. An integrated circuit structure, comprising:
- a semiconductor substrate;
a through-silicon via (TSV) extending into the semiconductor substrate;
a pad formed over the semiconductor substrate and spaced apart from the TSV;
a dielectric layer formed over the semiconductor substrate and surrounding the pad; and
an interconnect structure formed over the dielectric layer and electrically connecting the TSV and the pad;
wherein the interconnect structure comprisesan upper portion which is formed directly on the pad and extends laterally into direct electrical connection with the TSV; and
a lower portion outside the TSV, and extending downwardly from the upper portion into the dielectric layer to be in direct contact with the dielectric layer and to be co-elevational with the pad.
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Abstract
An integrated circuit structure includes a semiconductor substrate, a through-silicon via (TSV) extending into the semiconductor substrate, a pad formed over the semiconductor substrate and spaced apart from the TSV, and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad. The interconnect structure includes an upper portion formed on the pad and a lower portion adjacent to the pad, and the upper portion extends to electrically connect the TSV.
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Citations
11 Claims
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1. An integrated circuit structure, comprising:
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a semiconductor substrate; a through-silicon via (TSV) extending into the semiconductor substrate; a pad formed over the semiconductor substrate and spaced apart from the TSV; a dielectric layer formed over the semiconductor substrate and surrounding the pad; and an interconnect structure formed over the dielectric layer and electrically connecting the TSV and the pad; wherein the interconnect structure comprises an upper portion which is formed directly on the pad and extends laterally into direct electrical connection with the TSV; and a lower portion outside the TSV, and extending downwardly from the upper portion into the dielectric layer to be in direct contact with the dielectric layer and to be co-elevational with the pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An integrated circuit structure, comprising:
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a semiconductor substrate; a through-silicon via (TSV) extending into the semiconductor substrate; a pad formed over the semiconductor substrate and spaced apart from the TSV; and an interconnect structure formed over the semiconductor substrate and electrically connecting the TSV and the pad; wherein the interconnect structure comprises an upper portion formed on the pad and a lower portion adjacent to the pad, and the upper portion extends to electrically connect the TSV; and wherein the lower portion of the interconnect structure is a ring surrounding the pad.
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Specification