Semiconductor device and method for manufacturing the same
First Claim
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1. A semiconductor device comprising:
- a gate electrode layer;
a gate insulating layer adjacent to the gate electrode layer; and
a first oxide semiconductor layer adjacent to the gate insulating layer, the first oxide semiconductor layer comprising a channel formation region containing indium, gallium, and zinc,wherein the channel formation region contains at least one metal element selected from the group consisting of molybdenum, niobium, and tantalum.
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Abstract
It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.
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Citations
23 Claims
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1. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer adjacent to the gate electrode layer; and a first oxide semiconductor layer adjacent to the gate insulating layer, the first oxide semiconductor layer comprising a channel formation region containing indium, gallium, and zinc, wherein the channel formation region contains at least one metal element selected from the group consisting of molybdenum, niobium, and tantalum. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode layer over a substrate having an insulating surface; a gate insulating layer over the gate electrode layer; a first oxide semiconductor layer comprising a channel formation region over the gate insulating layer, the first oxide semiconductor layer containing indium, gallium, and zinc; and a source electrode layer and a drain electrode layer over the first oxide semiconductor layer, wherein the channel formation region contains at least one metal element selected from the group consisting of molybdenum, niobium, and tantalum. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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a gate electrode layer; a gate insulating layer adjacent to the gate electrode layer; a first oxide semiconductor layer adjacent to the gate insulating layer, the first oxide semiconductor layer comprising indium, gallium, and zinc; a source electrode layer; and a drain electrode layer, wherein the first oxide semiconductor layer comprising; a first region overlapped with the gate electrode layer; and a second region overlapped with one of the source electrode layer and the drain electrode layer, wherein the first region contains at least one metal element selected from the group consisting of molybdenum, niobium, and tantalum, and wherein a thickness of the first region is smaller than a thickness of the second region. - View Dependent Claims (20, 21, 22, 23)
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Specification