Semiconductor device

• US 8,430,326 B2
• Filed: 05/20/2011
• Issued: 04/30/2013
• Est. Priority Date: 02/06/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Koyama, Jun, Imai, Keitaro
• Primary Examiner(s): Haupt, Kristy A
• Application Number:
  US13/112,373
• Publication Number:
  US 20110220725A1
• Time in Patent Office: 711 Days
• Field of Search: 235/492, 365/225.7, 365/96, 365/200
• US Class Current: 235/492
• CPC Class Codes: G11C 17/16 using electrically-fusible links
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components

Abstract

A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.

Claims

1. A semiconductor device, over an insulating substrate, comprising:

a logic circuit;

a voltage boosting power source circuit;

a fuse memory circuit comprising a fuse element wherein the fuse memory circuit has a function of storing an output signal of the logic circuit; and

an antenna circuit,

wherein the voltage boosting power source circuit is electrically connected to the antenna circuit and the fuse memory circuit.

2. The semiconductor device according to claim 1, wherein the fuse memory circuit comprises a control circuit for writing data only one time.

3. The semiconductor device according to claim 1, wherein the fuse element carries out a storage operation by blowing a metal wiring.

4. The semiconductor device according to claim 1, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

5. The semiconductor device according to claim 1, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

6. The semiconductor device according to claim 1, wherein the antenna circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate.

7. The semiconductor device according to claim 1, wherein the logic circuit and the fuse memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

8. The semiconductor device according to claim 1, wherein the antenna circuit is formed over at least one of the logic circuit and the fuse memory circuit.

9. The semiconductor device according to claim 1, wherein a signal input to the antenna circuit is a radio frequency signal.

10. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 1.

11. The semiconductor device according to claim 1, wherein at least one of the fuse memory circuit, the modulating circuit, the demodulating circuit, and the logic circuit comprises a thin film transistor.

12. The semiconductor device according to claim 1, further comprising:

a modulating circuit; and

a demodulating circuit,

wherein the demodulating circuit is operationally connected to the logic circuit, and

wherein the modulating circuit and the demodulating circuit are electrically connected to the antenna circuit.

13. A semiconductor device, over an insulating substrate, comprising:

a modulating circuit;

a demodulating circuit;

a logic circuit, wherein the demodulating circuit is operationally connected to the logic circuit;

a rectifier circuit;

a stabilizing power circuit being electrically connected to the rectifier circuit;

a voltage boosting power source circuit being electrically connected to the stabilizing power circuit;

a fuse memory circuit comprising a fuse element wherein the fuse memory circuit has a function of storing an output signal of the logic circuit; and

an antenna circuit, wherein the rectifier circuit, the modulating circuit, and the demodulating circuit are electrically connected to the antenna circuit,

wherein the voltage boosting power source circuit is electrically connected to the fuse memory circuit.

14. The semiconductor device according to claim 13, wherein the fuse element carries out a storage operation by blowing a metal wiring.

15. The semiconductor device according to claim 13, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained by rectifying a signal output from the antenna circuit and boosting a voltage of the signal output from the antenna circuit.

16. The semiconductor device according to claim 13, wherein a power for carrying out a storage operation by the fuse memory circuit is obtained with an external high voltage power source.

17. The semiconductor device according to claim 13, wherein the antenna circuit, the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate.

18. The semiconductor device according to claim 13, wherein the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit are integrally formed over the same insulating substrate and the antenna circuit is formed over another insulating substrate.

19. The semiconductor device according to claim 13, wherein the antenna circuit is formed over at least one of the modulating circuit, the demodulating circuit, the logic circuit, and the fuse memory circuit.

20. The semiconductor device according to claim 13, wherein a signal input to the antenna circuit is a radio frequency signal.

21. An IC card, an IC tag, an RFID, a transponder, a paper money, a valuable instrument, a passport, electronic equipment, a bag, and clothing each comprising the semiconductor device according to claim 13.

22. The semiconductor device according to claim 13, wherein at least one of the fuse memory circuit, the modulating circuit, the demodulating circuit, and the logic circuit comprises a thin film transistor.