Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
First Claim
1. A semiconductor power device comprising an active cell area having a plurality of power transistor cells wherein:
- each of said power transistor cells is integrated and functioning together with a planar Schottky diode wherein each said active transistor cells comprising a trenched gate surrounded by a body region encompassing a source region of opposite conductivity type therein;
a heavy body region having a body dopant concentration higher than the body region disposed from a top surface of the substrate into the body region adjacent the source region and away from an outer edge of the body region distant from the trenched gate; and
wherein the planar Schottky diode further comprising a Schottky junction barrier metal covering area surrounded by the heavy body region extending over a space between adjacent body regions forming a Schottky diode there between, said adjacent body regions being disposed in a mesa of the semiconductor substrate between two adjacent trenched gate.
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Abstract
This invention discloses a semiconductor power device that includes an active cell area having a plurality of power transistor cells. Each of said power transistor cells has a planar Schottky diode that includes a Schottky junction barrier metal covering areas above gaps between separated body regions between two adjacent power transistor cells. The separated body regions further provide a function of adjusting a leakage current of said Schottky diode in each of said power transistor cells. Each of the planar Schottky diodes further includes a Shannon implant region disposed in a gap between the separated body regions of two adjacent power transistor cells for further adjusting a leakage current of said Schottky diode. Each of the power transistor cells further includes heavy body doped regions in the separated body regions next to source regions surrounding said Schottky diode forming a junction barrier Schottky (JBS) pocket region.
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Citations
11 Claims
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1. A semiconductor power device comprising an active cell area having a plurality of power transistor cells wherein:
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each of said power transistor cells is integrated and functioning together with a planar Schottky diode wherein each said active transistor cells comprising a trenched gate surrounded by a body region encompassing a source region of opposite conductivity type therein; a heavy body region having a body dopant concentration higher than the body region disposed from a top surface of the substrate into the body region adjacent the source region and away from an outer edge of the body region distant from the trenched gate; and wherein the planar Schottky diode further comprising a Schottky junction barrier metal covering area surrounded by the heavy body region extending over a space between adjacent body regions forming a Schottky diode there between, said adjacent body regions being disposed in a mesa of the semiconductor substrate between two adjacent trenched gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification