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Oxide semiconductor film and semiconductor device

  • US 8,492,758 B2
  • Filed: 09/22/2010
  • Issued: 07/23/2013
  • Est. Priority Date: 09/24/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode layer;

    an oxide semiconductor layer comprising a first region and a second region;

    a gate insulating layer between the gate electrode layer and the oxide semiconductor layer;

    a source electrode layer and a drain electrode layer electrically connected the oxide semiconductor layer; and

    an oxide insulating layer in contact with the oxide semiconductor layer,wherein the oxide semiconductor layer is between the gate insulating layer and the oxide insulating layer,wherein the first region comprises crystals which are c-axis-oriented in a direction substantially perpendicular to a surface of the oxide semiconductor layer, andwherein the second region is an amorphous region or a region in which amorphousness and microcrystals are mixed.

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