Alignment marks to enable 3D integration
First Claim
1. A method of forming alignment marks to enable three dimensional (3D) structures comprising:
- forming apertures in a first surface of a first semiconductor substrate;
bonding the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate;
thinning the first semiconductor substrate on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate;
forming a second alignment mark on the second surface of the first semiconductor substrate using at least one of the apertures as a first alignment mark such that the second alignment mark is within, and mimics, the first alignment mark; and
aligning a feature on the second surface of the first semiconductor substrate using the second alignment mark.
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Abstract
Disclosed are a structure including alignment marks and a method of forming alignment marks in three dimensional (3D) structures. The method includes forming apertures in a first surface of a first semiconductor substrate; joining the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark.
50 Citations
19 Claims
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1. A method of forming alignment marks to enable three dimensional (3D) structures comprising:
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forming apertures in a first surface of a first semiconductor substrate; bonding the first surface of the first semiconductor substrate to a first surface of a second semiconductor substrate; thinning the first semiconductor substrate on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; forming a second alignment mark on the second surface of the first semiconductor substrate using at least one of the apertures as a first alignment mark such that the second alignment mark is within, and mimics, the first alignment mark; and aligning a feature on the second surface of the first semiconductor substrate using the second alignment mark.
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2. A method of forming alignment marks to enable three dimensional (3D) structures comprising:
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obtaining a first semiconductor substrate and a second semiconductor substrate; forming apertures in a first surface of the first semiconductor substrate; bonding the first surface of the first semiconductor substrate to a first surface of the second semiconductor substrate; thinning the first semiconductor substrate on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate, wherein the apertures having a first closed end adjacent to the first surface of the first semiconductor substrate and a second closed end adjacent to the second surface of the first semiconductor substrate and the apertures having a central hollow space in each of the apertures; and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A method of forming alignment marks to enable three dimensional (3D) structures comprising:
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obtaining a first semiconductor substrate and a second semiconductor substrate; forming apertures in a first surface of the first semiconductor substrate; filling the apertures wherein filling the apertures comprises; depositing a liner of a first material in the apertures; and depositing a conformal layer of a second material over the liner, wherein the conformal layer does not fill the apertures so as to have a central hollow space in each of the apertures; bonding the first surface of the first semiconductor substrate to a first surface of the second semiconductor substrate; thinning the first semiconductor substrate on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; and aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark, the apertures used for aligning having a central hollow space in each of the apertures. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A method of forming alignment marks to enable three dimensional (3D) structures comprising:
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obtaining a first semiconductor substrate and a second semiconductor substrate; forming apertures in a first surface of the first semiconductor substrate; filling the apertures comprising depositing a liner of a first material in the apertures, and depositing a conformal layer of a second material over the liner, wherein the conformal layer does not fill the apertures; bonding the first surface of the first semiconductor substrate to a first surface of the second semiconductor substrate; thinning the first semiconductor on a second surface of the first semiconductor substrate to provide optical contrast between the apertures and the first semiconductor substrate; aligning a feature on the second surface of the first semiconductor substrate using the apertures as at least one alignment mark; and further comprising, after depositing a conformal layer, depositing a third material to completely fill the apertures, wherein the third material is a dielectric material.
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16. A semiconductor structure comprising a semiconductor substrate having an alignment mark that provides optical contrast on a first surface of the semiconductor substrate that continues through the semiconductor substrate to provide optical contrast on a second surface of the semiconductor substrate wherein the alignment mark comprises an aperture and wherein the aperture having a first closed end adjacent to the first surface of the first semiconductor substrate and a second closed end adjacent to the second surface of the first semiconductor substrate,
the aperture having a central hollow space in the aperture.
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19. A semiconductor structure comprising:
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a first semiconductor substrate having a first and a second surface, the first semiconductor substrate having filled apertures extending from the first surface to the second surface, the apertures comprising a liner of a first material, a conformal layer of a second material over the liner and a third material over the conformal layer to completely fill the apertures, wherein the third material is a dielectric material; a second semiconductor substrate having a first surface, wherein the first surface of the first semiconductor substrate is bonded to the first surface of the second semiconductor substrate; and a feature formed on the second surface of the first semiconductor substrate using the apertures in the second surface as an alignment mark for the formed feature.
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Specification