Semiconductor structure having a polysilicon structure and method of forming same
First Claim
Patent Images
1. A method of forming a semiconductor structure comprising:
- forming a polysilicon layer over a substrate;
forming a mask layer over the polysilicon layer;
patterning the mask layer to form a patterned mask layer;
forming a polysilicon structure by etching the polysilicon layer using the patterned mask layer as a mask; and
forming a dielectric layer over the substrate and surrounding the polysilicon structure, wherein the dielectric layer is arranged to provide no stress or a tensile stress on a sidewall of the polysilicon structure,the polysilicon structure having an upper surface and a lower surface, and the etching of the polysilicon layer being arranged to cause a width of the upper surface of the polysilicon structure to be greater than that of the lower surface of the polysilicon structure.
1 Assignment
0 Petitions
Accused Products
Abstract
The present application discloses a method of forming a semiconductor structure. In at least one embodiment, the method includes forming a polysilicon layer over a substrate. A mask layer is formed over the polysilicon layer. The mask layer is patterned to form a patterned mask layer. A polysilicon structure is formed by etching the polysilicon layer using the patterned mask layer as a mask. The polysilicon structure has an upper surface and a lower surface, and the etching of the polysilicon layer is arranged to cause a width of the upper surface of the polysilicon structure greater than that of the lower surface of the polysilicon structure.
5 Citations
20 Claims
-
1. A method of forming a semiconductor structure comprising:
-
forming a polysilicon layer over a substrate; forming a mask layer over the polysilicon layer; patterning the mask layer to form a patterned mask layer; forming a polysilicon structure by etching the polysilicon layer using the patterned mask layer as a mask; and forming a dielectric layer over the substrate and surrounding the polysilicon structure, wherein the dielectric layer is arranged to provide no stress or a tensile stress on a sidewall of the polysilicon structure, the polysilicon structure having an upper surface and a lower surface, and the etching of the polysilicon layer being arranged to cause a width of the upper surface of the polysilicon structure to be greater than that of the lower surface of the polysilicon structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of forming a semiconductor structure comprising:
-
forming a polysilicon layer over a substrate; patterning the polysilicon layer to form a polysilicon structure; forming a dielectric layer over the substrate and surrounding the polysilicon structure; removing the polysilicon structure to form an opening in the dielectric layer; rounding corners of the dielectric layer at the opening to enlarge a ratio of the width of the top portion of the opening to that of the bottom portion of the opening, the opening having a bottom portion and a top portion, and a width of the top portion being greater than that of the bottom portion. - View Dependent Claims (11, 12, 13, 14, 15, 16)
-
-
17. A semiconductor structure comprising:
-
a substrate; a polysilicon structure formed over the substrate; and a patterned mask layer formed over the polysilicon structure, wherein the mask layer comprises; a silicon nitride layer formed over the polysilicon structure; and a silicon oxide layer formed over the silicon nitride layer, the polysilicon structure having an upper surface and a lower surface, and a width of the upper surface of the polysilicon structure being greater than that of the lower surface of the polysilicon structure. - View Dependent Claims (18, 19, 20)
-
Specification