Bragg mirror and BAW resonator with a high quality factor on the bragg mirror

• US 8,593,234 B2
• Filed: 10/01/2010
• Issued: 11/26/2013
• Est. Priority Date: 10/01/2009
• Status: Active Grant

• Current Assignee: Stmicroelectronics France (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SA (STMicroelectronics NV)
• Inventors: Bar, Pierre, Joblot, Sylvain, Petit, David, Carpentier, Jean-Francois
• Primary Examiner(s): Summons, Barbara
• Application Number:
  US12/896,361
• Publication Number:
  US 20110080232A1
• Time in Patent Office: 1,152 Days
• Field of Search: 333187-189, 310/322, 310/334, 310/335
• US Class Current: 333/187
• CPC Class Codes: H03H 2003/025 the resonators or networks comprising an acoustic mirror
• CPC Class Codes: H03H 3/02 for the manufacture of piezoelectric or electrostrictive resonators or networks H03H3/08 takes precedence
• CPC Class Codes: H03H 9/175 Acoustic mirrors
• CPC Class Codes: Y10T 29/42 Piezoelectric device making

Abstract

A method for manufacturing a bulk acoustic wave resonator, each resonator including: above a substrate, a piezoelectric resonator, and next to the piezoelectric resonator, a contact pad connected to an electrode of the piezoelectric resonator; and, between the piezoelectric resonator and the substrate, a Bragg mirror including at least one conductive layer extending between the pad and the substrate and at least one upper silicon oxide layer extending between the pad and the substrate, the method including the steps of: depositing the upper silicon oxide layer; and decreasing the thickness unevenness of the upper silicon oxide layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each pad.

Claims

1. A Bragg mirror, comprising:

a first conductive layer;

a first dielectric layer on the first conductive layer;

a second conductive layer between a substrate and the first conductive layer and electrically connected to the first conductive layer, the second conductive layer having an electric conductivity greater than that of the first conductive layer and an acoustic impedance different from that of the first conductive layer.

2. The Bragg mirror of claim 1 wherein the first conductive layer is tungsten and the second conductive layer is aluminum.

3. The Bragg mirror of claim 1 wherein the first dielectric layer includes silicon dioxide.

4. The Bragg mirror of claim 1, further comprising:

a second dielectric layer, and

a third conductive layer on the second dielectric layer, the second conductive layer being on the third conductive layer.

5. The Bragg mirror of claim 1, further comprising a second dielectric layer and a third conductive layer on the second dielectric layer, wherein the third conductive layer and the second dielectric layer separate the first dielectric layer from the first conductive layer.

6. The Bragg mirror of claim 1 wherein the first dielectric layer has a thickness variation of less than 2%.

7. A bulk acoustic wave resonator, comprising:

a substrate;

a Bragg mirror on the substrate, the Bragg mirror having a first conductive layer on the substrate and a first dielectric layer on the first conductive layer;

a piezoelectric resonator on the first dielectric layer, the piezoelectric resonator having a first electrode;

a first contact pad adjacent the piezoelectric resonator on the first dielectric layer, the first contact pad coupled to the first electrode of the piezoelectric resonator; and

a second conductive layer between the substrate and the first conductive layer and electrically connected to the first conductive layer, the second conductive layer having an electric conductivity greater than that of the first conductive layer and an acoustic impedance different from that of the first conductive layer, wherein the first conductive layer and the second conductive layer extend from a first region that is between the first contact pad and the substrate to a second region that is between the piezoelectric resonator and the substrate.

8. The bulk acoustic wave resonator of claim 7 wherein the first conductive layer is tungsten and the second conductive layer is aluminum.

9. The bulk acoustic wave resonator of claim 7 wherein the piezoelectric resonator includes a piezoelectric layer on the first electrode and a second electrode on the piezoelectric layer, the bulk acoustic wave resonator including a second contact pad positioned adjacent the piezoelectric resonator and coupled to the second electrode.

10. The bulk acoustic wave resonator of claim 9 wherein the first dielectric layer includes silicon dioxide.

11. The bulk acoustic wave resonator of claim 7, further comprising:

a second dielectric layer on the substrate, and

a third conductive layer on the second dielectric layer, the second conductive layer being on the third conductive layer.

12. The bulk acoustic wave resonator of claim 7, further comprising a second dielectric layer and a third conductive layer on the second dielectric layer, wherein the third conductive layer and the second dielectric layer separate the first dielectric layer from the first conductive layer.

13. The bulk acoustic wave resonator of claim 7 wherein the first dielectric layer has a thickness variation of less than 2%.

14. A bulk acoustic wave resonator, comprising:

a substrate;

a Bragg mirror on the substrate, the Bragg mirror having a first conductive layer on the substrate and a first dielectric layer on the first conductive layer;

a piezoelectric resonator on the first dielectric layer, the piezoelectric resonator having a first electrode;

a first contact pad adjacent the piezoelectric resonator on the first dielectric layer, the first contact pad being coupled to the first electrode of the piezoelectric resonator; and

a second conductive layer between the substrate and the first conductive layer, the second conductive layer having an electric conductivity greater than that of the first conductive layer and an acoustic impedance different from that of the first conductive layer, wherein the first conductive layer and the second conductive layer extend from a first region that is between the first contact pad and the substrate to a second region that is between the piezoelectric resonator and the substrate, wherein the first conductive layer is tungsten and the second conductive layer is aluminum.

15. The bulk acoustic wave resonator of claim 14 wherein the piezoelectric resonator includes a piezoelectric layer on the first electrode and a second electrode on the piezoelectric layer;

a second contact pad positioned adjacent the piezoelectric resonator and coupled to the second electrode.

16. The bulk acoustic wave resonator of claim 15 wherein the first dielectric layer includes silicon dioxide.

17. The bulk acoustic wave resonator of claim 14, further comprising a second dielectric layer on the substrate, a third conductive layer on the second dielectric layer, and the second conductive layer on the third conductive layer.

18. The bulk acoustic wave resonator of claim 14, further comprising a third conductive layer on a second dielectric layer, wherein the third conductive layer and the second dielectric layer separate the first dielectric layer from the first conductive layer.

19. The bulk acoustic wave resonator of claim 14 wherein the first dielectric layer has a thickness variation of less than 2%.