Method for fabricating a FinFET device
First Claim
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1. A method for fabricating a FinFET device comprising:
- forming a fin structure on a semiconductor substrate;
forming a gate structure, wherein the gate structure overlies a first portion of the fin structure;
forming a capping layer over the semiconductor substrate, fin structure, and gate structure;
patterning the capping layer to form an opening, wherein the opening exposes a second portion of the fin structure; and
growing an epitaxial layer in the opening and on the second portion of the fin structure, wherein the epitaxial layer includes at least one of a source region and a drain region associated with the gate structure.
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Abstract
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary method includes forming a fin structure on a semiconductor substrate and forming a gate structure on the fin structure. A capping layer is then formed over the semiconductor substrate, fin structure, and gate structure. The capping layer is patterned to form an opening exposing a second portion of the fin structure. An epitaxial layer is grown in the opening and on the second portion of the fin structure. At least one of a source region and a drain region is provided in the epitaxial layer. The method may continue to remove the capping layer.
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Citations
20 Claims
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1. A method for fabricating a FinFET device comprising:
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forming a fin structure on a semiconductor substrate; forming a gate structure, wherein the gate structure overlies a first portion of the fin structure; forming a capping layer over the semiconductor substrate, fin structure, and gate structure; patterning the capping layer to form an opening, wherein the opening exposes a second portion of the fin structure; and growing an epitaxial layer in the opening and on the second portion of the fin structure, wherein the epitaxial layer includes at least one of a source region and a drain region associated with the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for fabricating a FinFET device comprising:
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forming a fin structure on a substrate; forming a gate structure on a first region of the fin structure; removing a second region of the fin structure to form a recessed portion of the fin structure; forming a capping layer over the first and second regions of the fin structure; patterning the capping layer to form an opening that defines a source and drain region associated with the gate structure, wherein the opening exposes the recessed portion of the fin structure; growing an epitaxial layer on the exposed recessed portion of the fin structure in the opening of the capping layer; and removing the capping layer after growing the epitaxial layer. - View Dependent Claims (12, 13, 14, 15)
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16. A method of fabricating a FinFET device comprising:
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providing a substrate of a crystalline semiconductor material having a top surface of a first crystal plane orientation; forming a fin structure of the crystalline semiconductor material overlying the substrate; forming a gate structure over a first portion of the fin structure; growing an epitaxy layer over a second portion of the fin structure adjacent the first portion, wherein a surface of the epitaxy layer substantially perpendicular to the top surface has a second crystal plane orientation, the second crystal plane orientation different than the first crystal plane orientation; and forming a channel region in the fin structure, wherein the channel region is aligned in a direction parallel to both the surface of the epitaxy layer and the top surface of the substrate. - View Dependent Claims (17, 18, 19, 20)
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Specification