Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layer

  • US 8,654,272 B2
  • Filed: 08/02/2010
  • Issued: 02/18/2014
  • Est. Priority Date: 08/07/2009
  • Status: Active Grant
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