Light emitting devices having current reducing structures
DCFirst Claim
1. A light emitting device, comprising:
- a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type;
a non-transparent feature on the first semiconductor surface;
a reduced conductivity region in the light emitting device that is aligned with the non-transparent feature, the reduced conductivity region and the non-transparent feature including surfaces that face one another; and
a reflector between the surfaces of the non-transparent feature and the reduced conductivity region that face one another.
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Abstract
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.
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Citations
20 Claims
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1. A light emitting device, comprising:
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a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type; a non-transparent feature on the first semiconductor surface; a reduced conductivity region in the light emitting device that is aligned with the non-transparent feature, the reduced conductivity region and the non-transparent feature including surfaces that face one another; and a reflector between the surfaces of the non-transparent feature and the reduced conductivity region that face one another. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A light emitting device, comprising:
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a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer; a bond pad on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer; a conductive finger that extends from and is electrically connected to the bond pad; and a reduced conductivity region in the light emitting device that is aligned with the conductive finger. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A light emitting device, comprising:
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a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type; a non-transparent feature on the first semiconductor surface; and a reduced conductivity region in the light emitting device that is not aligned with the non-transparent feature. - View Dependent Claims (19, 20)
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Specification