LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES
First Claim
1. A light emitting device, comprising:
- a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type;
a non-transparent feature on the first semiconductor surface;
a reduced conductivity region in the light emitting device that is aligned with the non-transparent feature; and
a reflector between the non-transparent feature and the reduced conductivity region.
3 Assignments
0 Petitions
Accused Products
Abstract
A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.
3 Citations
20 Claims
-
1. A light emitting device, comprising:
-
a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type; a non-transparent feature on the first semiconductor surface; a reduced conductivity region in the light emitting device that is aligned with the non-transparent feature; and a reflector between the non-transparent feature and the reduced conductivity region. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A light emitting device, comprising:
-
a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer; a bond pad on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer; a conductive finger that extends from and is electrically connected to the bond pad; and a reduced conductivity region in the light emitting device that is aligned with the conductive finger. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
-
-
18. A light emitting device, comprising:
-
a semiconductor diode having first and second opposing semiconductor surfaces of opposite conductivity type; a non-transparent feature on the first semiconductor surface; and a reduced conductivity region in the light emitting device that is not aligned with the non-transparent feature. - View Dependent Claims (19, 20)
-
Specification